Subthreshold swing model using scale length for sub-10 nm junction-based double-gate MOSFETs

We propose an analytical model for subthreshold swing using scale length for sub-10 nm double gate (DG) MOSFETs. When the order of the calculation for the series type potential distribution is increased it is possible to obtain accuracy, but there is a problem that the calculation becomes large. Usi...

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Veröffentlicht in:	International journal of electrical and computer engineering (Malacca, Malacca) Malacca), 2020-04, Vol.10 (2), p.1747
1. Verfasser:	Jung, Hakkee
Format:	Artikel
Sprache:	eng
Schlagworte:	Clinics Computer simulation Film thickness Mathematical models MOSFETs Oxide coatings Silicon Two dimensional models
Online-Zugang:	Volltext
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