Valley polarization reversal and spin ferromagnetism and antiferromagnetism in quantum dots of the topological insulator monolayer bismuthene on SiC

The valley and spin polarizations associated with electronic transport in quantum dots of the large-gap topological insulator (TI) monolayer bismuthene on SiC are investigated in the linear response regime using a minimal tight-binding model that accurately describes the low-energy electronic band s...

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Veröffentlicht in:	Physical review. B 2019-10, Vol.100 (16), Article 165417
Hauptverfasser:	Azari, Mohammadhadi, Kirczenow, George
Format:	Artikel
Sprache:	eng
Schlagworte:	Antiferromagnetism Brillouin zones Conduction bands Electron spin Electron transport Electrons Energy gap Ferromagnetism Monolayers Polarization (spin alignment) Quantum dots Topological insulators Valence band
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