Effects of Pr doping on crystalline orientation, microstructure, dielectric, and ferroelectric properties of Pb1.2−1.5xPrxZr0.52Ti0.48O3 thin films prepared by sol–gel method

Pb 1.2−1.5x Pr x Zr 0.52 Ti 0.48 O 3 (PPZT, x = 0%, 1%, 2%, 3%, 4%, 5%) thin films were prepared by sol–gel method on Pt(111)/Ti/SiO 2 /Si(100) substrates to investigate the effects of Pr doping on the crystalline structure, microstructure, dielectric properties, ferroelectric properties, and fatigu...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2019-12, Vol.30 (23), p.20816-20822
Hauptverfasser:	Chen, Da, Wang, Xing, Zhang, Renkai, Ding, Fei, Wang, Fengwei, Li, Biao, Zou, Helin
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemistry and Materials Science Crystal structure Crystallinity Dielectric properties Doped films Doping Electron microscopes Fatigue tests Ferroelectric materials Ferroelectricity Materials fatigue Materials Science Microstructure Optical and Electronic Materials Perovskite structure Perovskites Preferred orientation Silicon dioxide Silicon substrates Sol-gel processes Thin films
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