Improved growth conditions of pulsed laser-deposited PbI2 nanostructure film: towards high- photosensitivity PbI2/CNTs/Si photodetectors

Nanostructured PbI 2 films were grown by laser deposition technique at a substrate temperature of 45 °C was demonstrated. Herein, we attempted to improve and control the crystal growth of PbI 2 film and p-PbI 2 /MWCNTs/p-Si photodetector by finding the optimum laser fluence. X-ray diffraction XRD re...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of materials science. Materials in electronics 2019-12, Vol.30 (23), p.20850-20859
Hauptverfasser:	Ismail, Raid A., Mousa, Ali M., Shaker, Suaad S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemistry and Materials Science Crystal growth Electron microscopes Fluence Laser deposition Lasers Materials Science Optical and Electronic Materials Photometers Photosensitivity Pulsed lasers Stoichiometry Substrates
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!