Patterning Material Challenges for Improving EUV Stochastics

As the industry looks to extend single-expose extreme ultraviolet (EUV) lithography, stochastic effects become a significant concern to enable yield. Multiple previously-published reports have shown a strong tradeoff between resist sensitivity and observed stochastic defectivity. However, the limits...

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Veröffentlicht in:	Journal of Photopolymer Science and Technology 2019/06/24, Vol.32(1), pp.169-177
Hauptverfasser:	Silva, Anuja De, Meli, Luciana, Guo, Jing, Dutta, Ashim, Goldfarb, Dario L., Church, Jennifer, Felix, Nelson M.
Format:	Artikel
Sprache:	eng
Schlagworte:	EUV defectivity EUV resists EUV single exposure EUV stochastics Hardmask Optimization Organic chemistry Patterning
Online-Zugang:	Volltext
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