Topological states induced by local structural modification of the polar BiTeI(0001) surface
The layered polar semiconductor BiTeI exhibits large Rashba-type spin-orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surface of BiTeI(0001) induced by annealing in vacuum. Using scanning tunneling microscopy we show that t...
Gespeichert in:
| Veröffentlicht in: | New journal of physics 2018-06, Vol.20 (6), p.63035 |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 6 |
| container_start_page | 63035 |
| container_title | New journal of physics |
| container_volume | 20 |
| creator | Fiedler, Sebastian Eremeev, Sergey V Golyashov, Vladimir A Kaveev, Andrey K Tereshchenko, Oleg E Kokh, Konstantin A Chulkov, Evgueni V Bentmann, Hendrik Reinert, Friedrich |
| description | The layered polar semiconductor BiTeI exhibits large Rashba-type spin-orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surface of BiTeI(0001) induced by annealing in vacuum. Using scanning tunneling microscopy we show that the annealing-induced change in the near-surface stoichiometry results in a structural change from a non-centrosymmetric triple-layered to a quintuple-layered structure. The structural change gives rise to the emergence of topological surface states with helical spin texture as demonstrated by angle-resolved photoemission experiments and relativistic first-principles calculations. The results provide a way to modify the electronic structure of layered materials by a controlled manipulation of the atomic stacking sequences. |
| doi_str_mv | 10.1088/1367-2630/aac75e |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2312525805</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><doaj_id>oai_doaj_org_article_aeeefa0a6ff347d187364a1867773d9d</doaj_id><sourcerecordid>2312525805</sourcerecordid><originalsourceid>FETCH-LOGICAL-c448t-c910bc7bab9200a8ec94f87b2bb5f1f7455789d3d033f8eb6279b6a06f0b3e933</originalsourceid><addsrcrecordid>eNp9kU2LFDEQhoMouI7ePQY86ILjVpLuJH3UZdWBhb3M3oRQ-Voz9E7apPuw_96MLasH8ZTi5amnQhUhrxl8YKD1BRNSbbkUcIHoVB-ekLPH6Olf9XPyotYDAGOa8zPybZ-nPOa75HCkdcY5VJqOfnHBU_tAx7zmZXHzUlp5n32KDZ5TPtIc6fw90CbAQj-lfdi9g2Y-p3UpEV14SZ5FHGt49fvdkNvPV_vLr9vrmy-7y4_XW9d1et66gYF1yqIdOADq4IYuamW5tX1kUXV9r_TghQchog5WcjVYiSAjWBEGITZkt3p9xoOZSrrH8mAyJvMryOXOYJmTG4PBEEJEQBmj6JRnWgnZIdNSKSV8G7Ihb1bXVPKPJdTZHPJSju37hgvGe95r6BsFK-VKrrWE-DiVgTndw5wWbk4LN-s9Wsv7tSXl6Y_zP_jbf-DHw2Q4GGmgoaI3k4_iJ-remK8</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2312525805</pqid></control><display><type>article</type><title>Topological states induced by local structural modification of the polar BiTeI(0001) surface</title><source>IOP Publishing Free Content</source><source>DOAJ Directory of Open Access Journals</source><source>EZB-FREE-00999 freely available EZB journals</source><source>IOPscience extra</source><source>Alma/SFX Local Collection</source><source>Free Full-Text Journals in Chemistry</source><creator>Fiedler, Sebastian ; Eremeev, Sergey V ; Golyashov, Vladimir A ; Kaveev, Andrey K ; Tereshchenko, Oleg E ; Kokh, Konstantin A ; Chulkov, Evgueni V ; Bentmann, Hendrik ; Reinert, Friedrich</creator><creatorcontrib>Fiedler, Sebastian ; Eremeev, Sergey V ; Golyashov, Vladimir A ; Kaveev, Andrey K ; Tereshchenko, Oleg E ; Kokh, Konstantin A ; Chulkov, Evgueni V ; Bentmann, Hendrik ; Reinert, Friedrich</creatorcontrib><description>The layered polar semiconductor BiTeI exhibits large Rashba-type spin-orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surface of BiTeI(0001) induced by annealing in vacuum. Using scanning tunneling microscopy we show that the annealing-induced change in the near-surface stoichiometry results in a structural change from a non-centrosymmetric triple-layered to a quintuple-layered structure. The structural change gives rise to the emergence of topological surface states with helical spin texture as demonstrated by angle-resolved photoemission experiments and relativistic first-principles calculations. The results provide a way to modify the electronic structure of layered materials by a controlled manipulation of the atomic stacking sequences.</description><identifier>ISSN: 1367-2630</identifier><identifier>EISSN: 1367-2630</identifier><identifier>DOI: 10.1088/1367-2630/aac75e</identifier><identifier>CODEN: NJOPFM</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Annealing ; Electronic structure ; First principles ; Layered materials ; Photoelectric emission ; Physics ; Rashba effect ; spin-orbit interaction at surfaces ; Stoichiometry ; Surface layers ; topological insulator ; Topology</subject><ispartof>New journal of physics, 2018-06, Vol.20 (6), p.63035</ispartof><rights>2018 The Author(s). Published by IOP Publishing Ltd on behalf of Deutsche Physikalische Gesellschaft</rights><rights>2018. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c448t-c910bc7bab9200a8ec94f87b2bb5f1f7455789d3d033f8eb6279b6a06f0b3e933</citedby><cites>FETCH-LOGICAL-c448t-c910bc7bab9200a8ec94f87b2bb5f1f7455789d3d033f8eb6279b6a06f0b3e933</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1367-2630/aac75e/pdf$$EPDF$$P50$$Giop$$Hfree_for_read</linktopdf><link.rule.ids>314,776,780,860,2096,27901,27902,38845,38867,53815,53842</link.rule.ids></links><search><creatorcontrib>Fiedler, Sebastian</creatorcontrib><creatorcontrib>Eremeev, Sergey V</creatorcontrib><creatorcontrib>Golyashov, Vladimir A</creatorcontrib><creatorcontrib>Kaveev, Andrey K</creatorcontrib><creatorcontrib>Tereshchenko, Oleg E</creatorcontrib><creatorcontrib>Kokh, Konstantin A</creatorcontrib><creatorcontrib>Chulkov, Evgueni V</creatorcontrib><creatorcontrib>Bentmann, Hendrik</creatorcontrib><creatorcontrib>Reinert, Friedrich</creatorcontrib><title>Topological states induced by local structural modification of the polar BiTeI(0001) surface</title><title>New journal of physics</title><addtitle>NJP</addtitle><addtitle>New J. Phys</addtitle><description>The layered polar semiconductor BiTeI exhibits large Rashba-type spin-orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surface of BiTeI(0001) induced by annealing in vacuum. Using scanning tunneling microscopy we show that the annealing-induced change in the near-surface stoichiometry results in a structural change from a non-centrosymmetric triple-layered to a quintuple-layered structure. The structural change gives rise to the emergence of topological surface states with helical spin texture as demonstrated by angle-resolved photoemission experiments and relativistic first-principles calculations. The results provide a way to modify the electronic structure of layered materials by a controlled manipulation of the atomic stacking sequences.</description><subject>Annealing</subject><subject>Electronic structure</subject><subject>First principles</subject><subject>Layered materials</subject><subject>Photoelectric emission</subject><subject>Physics</subject><subject>Rashba effect</subject><subject>spin-orbit interaction at surfaces</subject><subject>Stoichiometry</subject><subject>Surface layers</subject><subject>topological insulator</subject><subject>Topology</subject><issn>1367-2630</issn><issn>1367-2630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>O3W</sourceid><sourceid>BENPR</sourceid><sourceid>DOA</sourceid><recordid>eNp9kU2LFDEQhoMouI7ePQY86ILjVpLuJH3UZdWBhb3M3oRQ-Voz9E7apPuw_96MLasH8ZTi5amnQhUhrxl8YKD1BRNSbbkUcIHoVB-ekLPH6Olf9XPyotYDAGOa8zPybZ-nPOa75HCkdcY5VJqOfnHBU_tAx7zmZXHzUlp5n32KDZ5TPtIc6fw90CbAQj-lfdi9g2Y-p3UpEV14SZ5FHGt49fvdkNvPV_vLr9vrmy-7y4_XW9d1et66gYF1yqIdOADq4IYuamW5tX1kUXV9r_TghQchog5WcjVYiSAjWBEGITZkt3p9xoOZSrrH8mAyJvMryOXOYJmTG4PBEEJEQBmj6JRnWgnZIdNSKSV8G7Ihb1bXVPKPJdTZHPJSju37hgvGe95r6BsFK-VKrrWE-DiVgTndw5wWbk4LN-s9Wsv7tSXl6Y_zP_jbf-DHw2Q4GGmgoaI3k4_iJ-remK8</recordid><startdate>20180620</startdate><enddate>20180620</enddate><creator>Fiedler, Sebastian</creator><creator>Eremeev, Sergey V</creator><creator>Golyashov, Vladimir A</creator><creator>Kaveev, Andrey K</creator><creator>Tereshchenko, Oleg E</creator><creator>Kokh, Konstantin A</creator><creator>Chulkov, Evgueni V</creator><creator>Bentmann, Hendrik</creator><creator>Reinert, Friedrich</creator><general>IOP Publishing</general><scope>O3W</scope><scope>TSCCA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>H8D</scope><scope>L7M</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>DOA</scope></search><sort><creationdate>20180620</creationdate><title>Topological states induced by local structural modification of the polar BiTeI(0001) surface</title><author>Fiedler, Sebastian ; Eremeev, Sergey V ; Golyashov, Vladimir A ; Kaveev, Andrey K ; Tereshchenko, Oleg E ; Kokh, Konstantin A ; Chulkov, Evgueni V ; Bentmann, Hendrik ; Reinert, Friedrich</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c448t-c910bc7bab9200a8ec94f87b2bb5f1f7455789d3d033f8eb6279b6a06f0b3e933</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Annealing</topic><topic>Electronic structure</topic><topic>First principles</topic><topic>Layered materials</topic><topic>Photoelectric emission</topic><topic>Physics</topic><topic>Rashba effect</topic><topic>spin-orbit interaction at surfaces</topic><topic>Stoichiometry</topic><topic>Surface layers</topic><topic>topological insulator</topic><topic>Topology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fiedler, Sebastian</creatorcontrib><creatorcontrib>Eremeev, Sergey V</creatorcontrib><creatorcontrib>Golyashov, Vladimir A</creatorcontrib><creatorcontrib>Kaveev, Andrey K</creatorcontrib><creatorcontrib>Tereshchenko, Oleg E</creatorcontrib><creatorcontrib>Kokh, Konstantin A</creatorcontrib><creatorcontrib>Chulkov, Evgueni V</creatorcontrib><creatorcontrib>Bentmann, Hendrik</creatorcontrib><creatorcontrib>Reinert, Friedrich</creatorcontrib><collection>IOP Publishing Free Content</collection><collection>IOPscience (Open Access)</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>New journal of physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fiedler, Sebastian</au><au>Eremeev, Sergey V</au><au>Golyashov, Vladimir A</au><au>Kaveev, Andrey K</au><au>Tereshchenko, Oleg E</au><au>Kokh, Konstantin A</au><au>Chulkov, Evgueni V</au><au>Bentmann, Hendrik</au><au>Reinert, Friedrich</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Topological states induced by local structural modification of the polar BiTeI(0001) surface</atitle><jtitle>New journal of physics</jtitle><stitle>NJP</stitle><addtitle>New J. Phys</addtitle><date>2018-06-20</date><risdate>2018</risdate><volume>20</volume><issue>6</issue><spage>63035</spage><pages>63035-</pages><issn>1367-2630</issn><eissn>1367-2630</eissn><coden>NJOPFM</coden><abstract>The layered polar semiconductor BiTeI exhibits large Rashba-type spin-orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surface of BiTeI(0001) induced by annealing in vacuum. Using scanning tunneling microscopy we show that the annealing-induced change in the near-surface stoichiometry results in a structural change from a non-centrosymmetric triple-layered to a quintuple-layered structure. The structural change gives rise to the emergence of topological surface states with helical spin texture as demonstrated by angle-resolved photoemission experiments and relativistic first-principles calculations. The results provide a way to modify the electronic structure of layered materials by a controlled manipulation of the atomic stacking sequences.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/1367-2630/aac75e</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1367-2630 |
| ispartof | New journal of physics, 2018-06, Vol.20 (6), p.63035 |
| issn | 1367-2630 1367-2630 |
| language | eng |
| recordid | cdi_proquest_journals_2312525805 |
| source | IOP Publishing Free Content; DOAJ Directory of Open Access Journals; EZB-FREE-00999 freely available EZB journals; IOPscience extra; Alma/SFX Local Collection; Free Full-Text Journals in Chemistry |
| subjects | Annealing Electronic structure First principles Layered materials Photoelectric emission Physics Rashba effect spin-orbit interaction at surfaces Stoichiometry Surface layers topological insulator Topology |
| title | Topological states induced by local structural modification of the polar BiTeI(0001) surface |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T04%3A22%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Topological%20states%20induced%20by%20local%20structural%20modification%20of%20the%20polar%20BiTeI(0001)%20surface&rft.jtitle=New%20journal%20of%20physics&rft.au=Fiedler,%20Sebastian&rft.date=2018-06-20&rft.volume=20&rft.issue=6&rft.spage=63035&rft.pages=63035-&rft.issn=1367-2630&rft.eissn=1367-2630&rft.coden=NJOPFM&rft_id=info:doi/10.1088/1367-2630/aac75e&rft_dat=%3Cproquest_cross%3E2312525805%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2312525805&rft_id=info:pmid/&rft_doaj_id=oai_doaj_org_article_aeeefa0a6ff347d187364a1867773d9d&rfr_iscdi=true |