Novel approach to passivation of InAs/GaSb type II superlattice photodetectors

The innovative two-step passivation by octadecanethiol (ODT) self-assembled monolayers (SAMs) and the following silicon dioxide (SiO 2 ) deposition was used for the type-II InAs/GaSb superlattice photodetector. To understand the mechanism of passivation, the (100) GaSb surface covered with the ODT a...

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Veröffentlicht in:	Applied physics. B, Lasers and optics Lasers and optics, 2019-12, Vol.125 (12), p.1-11, Article 223
Hauptverfasser:	Papis-Polakowska, E., Kaniewski, J., Jasik, A., Czuba, K., Sankowska, I., Karbownik, P., Runka, T., Martyński, T., Makowiecki, J., Łapiński, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Atomic force microscopy Contact angle Dark current Engineering Lasers Monolayers Optical Devices Optics Passivity Photometers Photonics Physical Chemistry Physics Physics and Astronomy Quantum Optics Raman spectroscopy Self-assembled monolayers Self-assembly Silicon dioxide Superlattices
Online-Zugang:	Volltext
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