Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

High Aluminum content channel (Al 0.85 Ga 0.15 N/Al 0.7 Ga 0.3 N) High Electron Mobility Transistors (HEMTs) were operated from room temperature to 500°C in ambient. The devices exhibited only moderate reduction, 58%, in on-state forward current. Gate lag measurements at 100 kHz and 10% duty only sh...

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