Challenges in Lift-Off Process Using CAMP Negative Photoresist in III-V IC Fabrication

In III-V IC processing, lift-off patterning is universally used. Historically used negative resist has its limitations; hence the image reverse process using positive tone resist has been utilized as the main work horse in lift-off applications. Metal lift-off processes using a specially designed ch...

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Veröffentlicht in:	IEEE transactions on semiconductor manufacturing 2019-11, Vol.32 (4), p.513-517
Hauptverfasser:	Berkoh, Daniel, Kulkarni, Sarang
Format:	Artikel
Sprache:	eng
Schlagworte:	bulk effect CAMP Cycle time Integrated circuit interconnections Lift Lift-off Liftoff Loading loading effect Metallization negative photoresist nLOF Organic chemistry Photoresists Resists retrograde profile Surfaces Thin films
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