Oxygen vacancy and Mn2+ induced ferromagnetism in Mn-doped ZnO thin films
With the purpose of investigating the origin of ferromagnetism (FM), Mn-doped ZnO thin films had been fabricated by radio frequency (rf) magnetron sputtering and subsequent anneal process. The characterization of the Mn-doped ZnO thin films was conducted by X-ray diffraction (XRD), X-ray photoelectr...
Gespeichert in:
| Veröffentlicht in: | Science China. Technological sciences 2019-10, Vol.62 (10), p.1755-1759 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1759 |
|---|---|
| container_issue | 10 |
| container_start_page | 1755 |
| container_title | Science China. Technological sciences |
| container_volume | 62 |
| creator | Guan, SuJun Nasu, Naho Zhang, Yu Tamamoto, Yuri Yamanobe, Maria Zhao, XinWei |
| description | With the purpose of investigating the origin of ferromagnetism (FM), Mn-doped ZnO thin films had been fabricated by radio frequency (rf) magnetron sputtering and subsequent anneal process. The characterization of the Mn-doped ZnO thin films was conducted by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and superconducting quantum interference device (SQUID). With increasing the anneal temperature from 300°C to 700°C for 3 min, the influence on magnetism of the Mn-doped ZnO thin films is slight. While extending the anneal time from 3 to 50 min at 300°C, the influence on magnetism is obvious and the Mn-doped ZnO thin films with 30 min clearly demonstrate FM. Compared with the effect of oxygen vacancy and substitutional Mn
2+
on the ferromagnetic behavior, O
V
plays the main role in inducing FM of the Mn-doped ZnO thin films with good crystal structure. |
| doi_str_mv | 10.1007/s11431-018-9463-6 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2303812188</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2303812188</sourcerecordid><originalsourceid>FETCH-LOGICAL-c246t-c6309e770fc4b17c9d6d559f3a563b105c56ddf5ec3c3b067734145e333760dc3</originalsourceid><addsrcrecordid>eNp1UE1LAzEQDaJgqf0B3hY8SjSzk4_doxQ_CkovevES0iRbt3SzNdmK_femrODJuczw5r03zCPkEtgNMKZuEwBHoAwqWnOJVJ6QCVSyplAzdppnqThVWMI5maW0YbmwqhnwCVksvw9rH4ovY02wh8IEV7yE8rpog9tb74rGx9h3Zh380KYuw3lNXb_Lq_ewLIaPjDTttksX5Kwx2-Rnv31K3h7uX-dP9Hn5uJjfPVNbcjlQK5HVXinWWL4CZWsnnRB1g0ZIXAETVkjnGuEtWlwxqRRy4MIjopLMWZySq9F3F_vPvU-D3vT7GPJJXWL-C0qoqsyCkWVjn1L0jd7FtjPxoIHpY2h6DE3n0PQxNC2zphw1KXPD2sc_5_9FP8kabOo</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2303812188</pqid></control><display><type>article</type><title>Oxygen vacancy and Mn2+ induced ferromagnetism in Mn-doped ZnO thin films</title><source>SpringerLink</source><source>Alma/SFX Local Collection</source><creator>Guan, SuJun ; Nasu, Naho ; Zhang, Yu ; Tamamoto, Yuri ; Yamanobe, Maria ; Zhao, XinWei</creator><creatorcontrib>Guan, SuJun ; Nasu, Naho ; Zhang, Yu ; Tamamoto, Yuri ; Yamanobe, Maria ; Zhao, XinWei</creatorcontrib><description>With the purpose of investigating the origin of ferromagnetism (FM), Mn-doped ZnO thin films had been fabricated by radio frequency (rf) magnetron sputtering and subsequent anneal process. The characterization of the Mn-doped ZnO thin films was conducted by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and superconducting quantum interference device (SQUID). With increasing the anneal temperature from 300°C to 700°C for 3 min, the influence on magnetism of the Mn-doped ZnO thin films is slight. While extending the anneal time from 3 to 50 min at 300°C, the influence on magnetism is obvious and the Mn-doped ZnO thin films with 30 min clearly demonstrate FM. Compared with the effect of oxygen vacancy and substitutional Mn
2+
on the ferromagnetic behavior, O
V
plays the main role in inducing FM of the Mn-doped ZnO thin films with good crystal structure.</description><identifier>ISSN: 1674-7321</identifier><identifier>EISSN: 1869-1900</identifier><identifier>DOI: 10.1007/s11431-018-9463-6</identifier><language>eng</language><publisher>Beijing: Science China Press</publisher><subject>Annealing ; Crystal structure ; Engineering ; Ferromagnetism ; Magnetism ; Magnetron sputtering ; Photoelectrons ; Photovoltaic cells ; Superconducting quantum interference devices ; Thin films ; Vacancies ; X ray photoelectron spectroscopy ; Zinc oxide</subject><ispartof>Science China. Technological sciences, 2019-10, Vol.62 (10), p.1755-1759</ispartof><rights>Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019</rights><rights>Copyright Springer Nature B.V. 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c246t-c6309e770fc4b17c9d6d559f3a563b105c56ddf5ec3c3b067734145e333760dc3</citedby><cites>FETCH-LOGICAL-c246t-c6309e770fc4b17c9d6d559f3a563b105c56ddf5ec3c3b067734145e333760dc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11431-018-9463-6$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11431-018-9463-6$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Guan, SuJun</creatorcontrib><creatorcontrib>Nasu, Naho</creatorcontrib><creatorcontrib>Zhang, Yu</creatorcontrib><creatorcontrib>Tamamoto, Yuri</creatorcontrib><creatorcontrib>Yamanobe, Maria</creatorcontrib><creatorcontrib>Zhao, XinWei</creatorcontrib><title>Oxygen vacancy and Mn2+ induced ferromagnetism in Mn-doped ZnO thin films</title><title>Science China. Technological sciences</title><addtitle>Sci. China Technol. Sci</addtitle><description>With the purpose of investigating the origin of ferromagnetism (FM), Mn-doped ZnO thin films had been fabricated by radio frequency (rf) magnetron sputtering and subsequent anneal process. The characterization of the Mn-doped ZnO thin films was conducted by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and superconducting quantum interference device (SQUID). With increasing the anneal temperature from 300°C to 700°C for 3 min, the influence on magnetism of the Mn-doped ZnO thin films is slight. While extending the anneal time from 3 to 50 min at 300°C, the influence on magnetism is obvious and the Mn-doped ZnO thin films with 30 min clearly demonstrate FM. Compared with the effect of oxygen vacancy and substitutional Mn
2+
on the ferromagnetic behavior, O
V
plays the main role in inducing FM of the Mn-doped ZnO thin films with good crystal structure.</description><subject>Annealing</subject><subject>Crystal structure</subject><subject>Engineering</subject><subject>Ferromagnetism</subject><subject>Magnetism</subject><subject>Magnetron sputtering</subject><subject>Photoelectrons</subject><subject>Photovoltaic cells</subject><subject>Superconducting quantum interference devices</subject><subject>Thin films</subject><subject>Vacancies</subject><subject>X ray photoelectron spectroscopy</subject><subject>Zinc oxide</subject><issn>1674-7321</issn><issn>1869-1900</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1UE1LAzEQDaJgqf0B3hY8SjSzk4_doxQ_CkovevES0iRbt3SzNdmK_femrODJuczw5r03zCPkEtgNMKZuEwBHoAwqWnOJVJ6QCVSyplAzdppnqThVWMI5maW0YbmwqhnwCVksvw9rH4ovY02wh8IEV7yE8rpog9tb74rGx9h3Zh380KYuw3lNXb_Lq_ewLIaPjDTttksX5Kwx2-Rnv31K3h7uX-dP9Hn5uJjfPVNbcjlQK5HVXinWWL4CZWsnnRB1g0ZIXAETVkjnGuEtWlwxqRRy4MIjopLMWZySq9F3F_vPvU-D3vT7GPJJXWL-C0qoqsyCkWVjn1L0jd7FtjPxoIHpY2h6DE3n0PQxNC2zphw1KXPD2sc_5_9FP8kabOo</recordid><startdate>20191001</startdate><enddate>20191001</enddate><creator>Guan, SuJun</creator><creator>Nasu, Naho</creator><creator>Zhang, Yu</creator><creator>Tamamoto, Yuri</creator><creator>Yamanobe, Maria</creator><creator>Zhao, XinWei</creator><general>Science China Press</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20191001</creationdate><title>Oxygen vacancy and Mn2+ induced ferromagnetism in Mn-doped ZnO thin films</title><author>Guan, SuJun ; Nasu, Naho ; Zhang, Yu ; Tamamoto, Yuri ; Yamanobe, Maria ; Zhao, XinWei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c246t-c6309e770fc4b17c9d6d559f3a563b105c56ddf5ec3c3b067734145e333760dc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Annealing</topic><topic>Crystal structure</topic><topic>Engineering</topic><topic>Ferromagnetism</topic><topic>Magnetism</topic><topic>Magnetron sputtering</topic><topic>Photoelectrons</topic><topic>Photovoltaic cells</topic><topic>Superconducting quantum interference devices</topic><topic>Thin films</topic><topic>Vacancies</topic><topic>X ray photoelectron spectroscopy</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Guan, SuJun</creatorcontrib><creatorcontrib>Nasu, Naho</creatorcontrib><creatorcontrib>Zhang, Yu</creatorcontrib><creatorcontrib>Tamamoto, Yuri</creatorcontrib><creatorcontrib>Yamanobe, Maria</creatorcontrib><creatorcontrib>Zhao, XinWei</creatorcontrib><collection>CrossRef</collection><jtitle>Science China. Technological sciences</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Guan, SuJun</au><au>Nasu, Naho</au><au>Zhang, Yu</au><au>Tamamoto, Yuri</au><au>Yamanobe, Maria</au><au>Zhao, XinWei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Oxygen vacancy and Mn2+ induced ferromagnetism in Mn-doped ZnO thin films</atitle><jtitle>Science China. Technological sciences</jtitle><stitle>Sci. China Technol. Sci</stitle><date>2019-10-01</date><risdate>2019</risdate><volume>62</volume><issue>10</issue><spage>1755</spage><epage>1759</epage><pages>1755-1759</pages><issn>1674-7321</issn><eissn>1869-1900</eissn><abstract>With the purpose of investigating the origin of ferromagnetism (FM), Mn-doped ZnO thin films had been fabricated by radio frequency (rf) magnetron sputtering and subsequent anneal process. The characterization of the Mn-doped ZnO thin films was conducted by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and superconducting quantum interference device (SQUID). With increasing the anneal temperature from 300°C to 700°C for 3 min, the influence on magnetism of the Mn-doped ZnO thin films is slight. While extending the anneal time from 3 to 50 min at 300°C, the influence on magnetism is obvious and the Mn-doped ZnO thin films with 30 min clearly demonstrate FM. Compared with the effect of oxygen vacancy and substitutional Mn
2+
on the ferromagnetic behavior, O
V
plays the main role in inducing FM of the Mn-doped ZnO thin films with good crystal structure.</abstract><cop>Beijing</cop><pub>Science China Press</pub><doi>10.1007/s11431-018-9463-6</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1674-7321 |
| ispartof | Science China. Technological sciences, 2019-10, Vol.62 (10), p.1755-1759 |
| issn | 1674-7321 1869-1900 |
| language | eng |
| recordid | cdi_proquest_journals_2303812188 |
| source | SpringerLink; Alma/SFX Local Collection |
| subjects | Annealing Crystal structure Engineering Ferromagnetism Magnetism Magnetron sputtering Photoelectrons Photovoltaic cells Superconducting quantum interference devices Thin films Vacancies X ray photoelectron spectroscopy Zinc oxide |
| title | Oxygen vacancy and Mn2+ induced ferromagnetism in Mn-doped ZnO thin films |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-11T15%3A39%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Oxygen%20vacancy%20and%20Mn2+%20induced%20ferromagnetism%20in%20Mn-doped%20ZnO%20thin%20films&rft.jtitle=Science%20China.%20Technological%20sciences&rft.au=Guan,%20SuJun&rft.date=2019-10-01&rft.volume=62&rft.issue=10&rft.spage=1755&rft.epage=1759&rft.pages=1755-1759&rft.issn=1674-7321&rft.eissn=1869-1900&rft_id=info:doi/10.1007/s11431-018-9463-6&rft_dat=%3Cproquest_cross%3E2303812188%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2303812188&rft_id=info:pmid/&rfr_iscdi=true |