p-Type transparent amorphous oxide thin-film transistors using low-temperature solution-processed nickel oxide

Transparent amorphous oxide semiconductor (TAOS) represented by a-InGaZnO (IGZO) has achieved their commercial success in the display industry due to its superior material properties (e.g. high mobility (>10 cm2 V−1 s−1), good transparency and excellent uniformity). However, TAOSs with excellent...

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Veröffentlicht in:	Journal of alloys and compounds 2019-10, Vol.806, p.40-51
Hauptverfasser:	Xu, Wangying, Zhang, Junpeng, Li, Yujia, Zhang, Lingjiao, Chen, Lin, Zhu, Deliang, Cao, Peijiang, Liu, Wenjun, Han, Shun, Liu, Xinke, Lu, Youming
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Circuits Current modulation Dielectric properties Electrical properties Electrodes Hole mobility Indium gallium zinc oxide Low temperature Material properties Nickel oxides NiO Optimization Oxide TFTs p-type oxide Process parameters Semiconductor devices Solution process Thin film transistors Transparent amorphous oxide semiconductor
Online-Zugang:	Volltext
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