On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs

In 4H silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs), slow drain current transients and strong sweep hysteresis govern the subthreshold regime, in particular, after negative gate stress. Although these are clearly charge carrier trapping and emission phenomena, a...

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Veröffentlicht in:	Applied physics letters 2019-10, Vol.115 (15)
Hauptverfasser:	Rasinger, Fabian, Hauck, Martin, Rescher, Gerald, Aichinger, Thomas, Weber, Heiko B., Krieger, Michael, Pobegen, Gregor
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption cross sections Applied physics Beta decay Current carriers Electron capture Emission Field effect transistors Hysteresis MOSFETs Semiconductor devices Silicon carbide Time constant Time dependence
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