Improvement of Deep Reactive Ion Etching Process For Motional Resistance Reduction of Capacitively Transduced Vibrating Resonators

Motional resistance is one of the most important performance metrics for high quality factor, low power, and complementary metal-oxide semiconductor (CMOS)-compatible capacitively transduced vibrating micromechanical resonators. The motional resistance is primarily set by the electrode-to-resonator...

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Veröffentlicht in:	IEEE sensors letters 2018-03, Vol.2 (1), p.1-4
Hauptverfasser:	Alsolami, Abdulrahman, Zaman, Adnan, Rivera, Ivan Fernando, Baghelani, Masoud, Jing Wang
Format:	Artikel
Sprache:	eng
Schlagworte:	Air gaps capacitive transducers CMOS deep reactive ion etching (DRIE) Iterative closest point algorithm Metal oxides Motional resistance Parameter modification Performance measurement Process parameters Q factors quality factor Reactive ion etching Reduction Resistance Resonators Roughness Scalloping Sensor-actuators Silicon Substrates Sulfur hexafluoride vibrating micromechanical resonators
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