Contact Resistance Reduction of WS2 FETs Using High-Pressure Hydrogen Annealing

The transition metal dichalcogenides (TMDCs) have been extensively investigated for various applications such as logic, memory and optical devices, and sensors. The pressing challenge in the research of TMDCs is the electrical performance limited by the high contact resistance. We report more than 5...

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Veröffentlicht in:	IEEE journal of the Electron Devices Society 2018, Vol.6, p.164-168
Hauptverfasser:	Kim, Yun Ji, Park, Woojin, Yang, Jin Ho, Kim, Yonghun, Lee, Byoung Hun
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Contact pressure Contact resistance Doping Electric contacts Electronics Fermi-level depinning Field effect transistors high-pressure hydrogen annealing Hydrogen Memory devices Metals Nonhomogeneous media Optical memory (data storage) Optimization Reduction Resistance Semiconductor devices Titanium Transition metal compounds WS₂ FET
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