A Fully Integrated FVF-Based Low-Dropout Regulator With Wide Load Capacitance and Current Ranges
The flipped-voltage-follower-based low-dropout regulator (LDO) has drawn attention for its fast response and reduced complexity, while super source follower can be combined to push the pole at the gate of the pass device to high frequency. But the maximum load current and minimum load capacitance of...
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Veröffentlicht in: | IEEE transactions on power electronics 2019-12, Vol.34 (12), p.11880-11888 |
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description | The flipped-voltage-follower-based low-dropout regulator (LDO) has drawn attention for its fast response and reduced complexity, while super source follower can be combined to push the pole at the gate of the pass device to high frequency. But the maximum load current and minimum load capacitance of this topology are limited, especially when the poles and zero from the SSF are omitted in previous designs. This paper proposes a solution to extend the ranges of the load current and load capacitance, by implementing a small feed-forward capacitor (C_{F}) and a damping factor control circuitry. In addition, a slew rate enhancement circuit is applied to reduce the voltage undershoot. The proposed LDO is verified in a 65-nm CMOS process with 0.008 mm 2 active area. The measured voltage undershoot is 80 mV with a load steps from 100 μ A to 50 mA with 2-ns edge times, with no external capacitor. And the maximum load capacitance can be extended to 2 nF. A figure-of-merit of 0.8 mV is achieved. |
doi_str_mv | 10.1109/TPEL.2019.2904622 |
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But the maximum load current and minimum load capacitance of this topology are limited, especially when the poles and zero from the SSF are omitted in previous designs. This paper proposes a solution to extend the ranges of the load current and load capacitance, by implementing a small feed-forward capacitor (<inline-formula><tex-math notation="LaTeX">C_{F}</tex-math></inline-formula>) and a damping factor control circuitry. In addition, a slew rate enhancement circuit is applied to reduce the voltage undershoot. The proposed LDO is verified in a 65-nm CMOS process with 0.008 mm 2 active area. The measured voltage undershoot is 80 mV with a load steps from 100 μ A to 50 mA with 2-ns edge times, with no external capacitor. And the maximum load capacitance can be extended to 2 nF. 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(IEEE) 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c341t-89226370a5b28d54edc7e72f6b8a32d1a92923eddb161220206531f4131c597a3</citedby><cites>FETCH-LOGICAL-c341t-89226370a5b28d54edc7e72f6b8a32d1a92923eddb161220206531f4131c597a3</cites><orcidid>0000-0003-0497-194X ; 0000-0001-9273-7576 ; 0000-0002-8377-1171</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8665872$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8665872$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Huang, Mo</creatorcontrib><creatorcontrib>Feng, Haigang</creatorcontrib><creatorcontrib>Lu, Yan</creatorcontrib><title>A Fully Integrated FVF-Based Low-Dropout Regulator With Wide Load Capacitance and Current Ranges</title><title>IEEE transactions on power electronics</title><addtitle>TPEL</addtitle><description>The flipped-voltage-follower-based low-dropout regulator (LDO) has drawn attention for its fast response and reduced complexity, while super source follower can be combined to push the pole at the gate of the pass device to high frequency. But the maximum load current and minimum load capacitance of this topology are limited, especially when the poles and zero from the SSF are omitted in previous designs. This paper proposes a solution to extend the ranges of the load current and load capacitance, by implementing a small feed-forward capacitor (<inline-formula><tex-math notation="LaTeX">C_{F}</tex-math></inline-formula>) and a damping factor control circuitry. In addition, a slew rate enhancement circuit is applied to reduce the voltage undershoot. The proposed LDO is verified in a 65-nm CMOS process with 0.008 mm 2 active area. The measured voltage undershoot is 80 mV with a load steps from 100 μ A to 50 mA with 2-ns edge times, with no external capacitor. And the maximum load capacitance can be extended to 2 nF. A figure-of-merit of 0.8 mV is achieved.</description><subject>Amplifier</subject><subject>Capacitance</subject><subject>Capacitors</subject><subject>Circuits</subject><subject>CMOS</subject><subject>Control theory</subject><subject>Damping</subject><subject>damping factor control (DFC)</subject><subject>Electrical measurement</subject><subject>feed-forward</subject><subject>Feedforward control</subject><subject>flipped voltage follower (FVF)</subject><subject>Logic gates</subject><subject>low-dropout regulator (LDO)</subject><subject>output capacitorless (OCL)</subject><subject>Regulators</subject><subject>Resistance</subject><subject>Slew rate</subject><subject>slew rate enhancement (SRE)</subject><subject>Stability analysis</subject><subject>super source follower (SSF)</subject><subject>Topology</subject><issn>0885-8993</issn><issn>1941-0107</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kN9LwzAQx4MoOKd_gPhS8Lkzd2ma5nHOVQcFRaY-1qxJZ0dtZ5Ii--_N2PDlfnDf793xIeQa6ASAyrvly7yYIAU5QUmTFPGEjEAmEFOg4pSMaJbxOJOSnZML5zaUQsIpjMjnNMqHtt1Fi86btVXe6Ch_z-N75UJV9L_xg-23_eCjV7MeWuV7G300_isEbcJc6WimtqpqvOoqE6ku9IO1pgsG1a2NuyRntWqduTrmMXnL58vZU1w8Py5m0yKuWAI-vIaYMkEVX2GmeWJ0JYzAOl1liqEGJVEiM1qvIAVEijTlDOoEGFRcCsXG5Pawd2v7n8E4X276wXbhZIkYtguOggYVHFSV7Z2zpi63tvlWdlcCLfcgyz3Icg-yPIIMnpuDpzHG_OuzNOWZQPYH2DZs1w</recordid><startdate>20191201</startdate><enddate>20191201</enddate><creator>Huang, Mo</creator><creator>Feng, Haigang</creator><creator>Lu, Yan</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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subjects | Amplifier Capacitance Capacitors Circuits CMOS Control theory Damping damping factor control (DFC) Electrical measurement feed-forward Feedforward control flipped voltage follower (FVF) Logic gates low-dropout regulator (LDO) output capacitorless (OCL) Regulators Resistance Slew rate slew rate enhancement (SRE) Stability analysis super source follower (SSF) Topology |
title | A Fully Integrated FVF-Based Low-Dropout Regulator With Wide Load Capacitance and Current Ranges |
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