Theoretical studies on the switching mechanism of VMCO memories

In this work, we propose a new switching model for Vacancy Modulated Conductive Oxide (VMCO) memories which are non-filamentary resistive switching memories. In recent years, attention has been drawn to VMCO memories because the current through them depends on the area of the device. Since the switc...

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Veröffentlicht in:	Microelectronic engineering 2019-07, Vol.215, p.110997, Article 110997
Hauptverfasser:	Nakanishi, T., Chokawa, K., Araidai, M., Nakayama, T., Shiraishi, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Computer memory First principles Interface reaction Metal oxides Non-filamentary resistive switching memory Oxygen Switching Switching mechanism Titanium dioxide Vacancies VMCO memory
Online-Zugang:	Volltext
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