Effect of sulfurization process on the properties of solution-processed Cu2SnS3 thin film solar cells
Cu 2 SnS 3 (CTS) based thin film solar cells were successfully fabricated through a facile solution processes followed by a post-sulfurization treatment. The influence of sulfurization temperature and time on the structural, compositional, morphological, optical and also the electrical properties of...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2019-10, Vol.30 (19), p.17947-17955 |
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| container_issue | 19 |
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| container_title | Journal of materials science. Materials in electronics |
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| creator | Zhao, Yun Han, Xiuxun Xu, Bin Dong, Chen Li, Junshuai Yan, Xingbin |
| description | Cu
2
SnS
3
(CTS) based thin film solar cells were successfully fabricated through a facile solution processes followed by a post-sulfurization treatment. The influence of sulfurization temperature and time on the structural, compositional, morphological, optical and also the electrical properties of the solar cells were systematically studied. The results showed that the CTS thin films sulfurized at 580 °C would be a void-free and densely packed absorber layer with the grain size to be microns, having the band gap of ~ 1.01 eV. Furthermore, the sulfurization time is the key factor to influence the electronic properties of CTS absorber layer, and thus resulting in the best device performance of PCE = 2.41% by 20 min sulfurization process. |
| doi_str_mv | 10.1007/s10854-019-02148-5 |
| format | Article |
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2
SnS
3
(CTS) based thin film solar cells were successfully fabricated through a facile solution processes followed by a post-sulfurization treatment. The influence of sulfurization temperature and time on the structural, compositional, morphological, optical and also the electrical properties of the solar cells were systematically studied. The results showed that the CTS thin films sulfurized at 580 °C would be a void-free and densely packed absorber layer with the grain size to be microns, having the band gap of ~ 1.01 eV. Furthermore, the sulfurization time is the key factor to influence the electronic properties of CTS absorber layer, and thus resulting in the best device performance of PCE = 2.41% by 20 min sulfurization process.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-019-02148-5</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Absorbers ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Copper sulfides ; Electrical properties ; Grain size ; Materials Science ; Optical and Electronic Materials ; Optical properties ; Photovoltaic cells ; Solar cells ; Sulfurization ; Thin films</subject><ispartof>Journal of materials science. Materials in electronics, 2019-10, Vol.30 (19), p.17947-17955</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2019</rights><rights>Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2019). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-ca541f27780be679ff70671ee2b5917b93208f0f396f3e9af38ac37af90df0a63</citedby><cites>FETCH-LOGICAL-c385t-ca541f27780be679ff70671ee2b5917b93208f0f396f3e9af38ac37af90df0a63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-019-02148-5$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-019-02148-5$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Zhao, Yun</creatorcontrib><creatorcontrib>Han, Xiuxun</creatorcontrib><creatorcontrib>Xu, Bin</creatorcontrib><creatorcontrib>Dong, Chen</creatorcontrib><creatorcontrib>Li, Junshuai</creatorcontrib><creatorcontrib>Yan, Xingbin</creatorcontrib><title>Effect of sulfurization process on the properties of solution-processed Cu2SnS3 thin film solar cells</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>Cu
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SnS
3
(CTS) based thin film solar cells were successfully fabricated through a facile solution processes followed by a post-sulfurization treatment. The influence of sulfurization temperature and time on the structural, compositional, morphological, optical and also the electrical properties of the solar cells were systematically studied. The results showed that the CTS thin films sulfurized at 580 °C would be a void-free and densely packed absorber layer with the grain size to be microns, having the band gap of ~ 1.01 eV. Furthermore, the sulfurization time is the key factor to influence the electronic properties of CTS absorber layer, and thus resulting in the best device performance of PCE = 2.41% by 20 min sulfurization process.</description><subject>Absorbers</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Copper sulfides</subject><subject>Electrical properties</subject><subject>Grain size</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Optical properties</subject><subject>Photovoltaic cells</subject><subject>Solar cells</subject><subject>Sulfurization</subject><subject>Thin films</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp9kE1LAzEQhoMoWKt_wNOC5-gk2WyyRyn1AwoequAtpNsZ3bLdrcnuQX-9abfgzct8wPO-M7yMXQu4FQDmLgqwOucgSg5S5JbrEzYR2iieW_l-yiZQasNzLeU5u4hxAwBFruyE4ZwIqz7rKItDQ0Oof3xfd222C12FMWZp7D9xv-4w9DXGA9o1w57iRwrX2WyQy3apEly3GdXNdg_5kFXYNPGSnZFvIl4d-5S9PcxfZ0988fL4PLtf8EpZ3fPK61yQNMbCCgtTEhkojECUK10KsyqVBEtAqixIYelJWV8p46mENYEv1JTdjL7pr68BY-823RDadNJJaa0SqYhEyZGqQhdjQHK7UG99-HYC3D5ON8bpUpzuEKfTSaRGUUxw-4Hhz_of1S_6P3kl</recordid><startdate>20191001</startdate><enddate>20191001</enddate><creator>Zhao, Yun</creator><creator>Han, Xiuxun</creator><creator>Xu, Bin</creator><creator>Dong, Chen</creator><creator>Li, Junshuai</creator><creator>Yan, Xingbin</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope></search><sort><creationdate>20191001</creationdate><title>Effect of sulfurization process on the properties of solution-processed Cu2SnS3 thin film solar cells</title><author>Zhao, Yun ; Han, Xiuxun ; Xu, Bin ; Dong, Chen ; Li, Junshuai ; Yan, Xingbin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-ca541f27780be679ff70671ee2b5917b93208f0f396f3e9af38ac37af90df0a63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Absorbers</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Copper sulfides</topic><topic>Electrical properties</topic><topic>Grain size</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Optical properties</topic><topic>Photovoltaic cells</topic><topic>Solar cells</topic><topic>Sulfurization</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhao, Yun</creatorcontrib><creatorcontrib>Han, Xiuxun</creatorcontrib><creatorcontrib>Xu, Bin</creatorcontrib><creatorcontrib>Dong, Chen</creatorcontrib><creatorcontrib>Li, Junshuai</creatorcontrib><creatorcontrib>Yan, Xingbin</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhao, Yun</au><au>Han, Xiuxun</au><au>Xu, Bin</au><au>Dong, Chen</au><au>Li, Junshuai</au><au>Yan, Xingbin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of sulfurization process on the properties of solution-processed Cu2SnS3 thin film solar cells</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2019-10-01</date><risdate>2019</risdate><volume>30</volume><issue>19</issue><spage>17947</spage><epage>17955</epage><pages>17947-17955</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Cu
2
SnS
3
(CTS) based thin film solar cells were successfully fabricated through a facile solution processes followed by a post-sulfurization treatment. The influence of sulfurization temperature and time on the structural, compositional, morphological, optical and also the electrical properties of the solar cells were systematically studied. The results showed that the CTS thin films sulfurized at 580 °C would be a void-free and densely packed absorber layer with the grain size to be microns, having the band gap of ~ 1.01 eV. Furthermore, the sulfurization time is the key factor to influence the electronic properties of CTS absorber layer, and thus resulting in the best device performance of PCE = 2.41% by 20 min sulfurization process.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-019-02148-5</doi><tpages>9</tpages></addata></record> |
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| subjects | Absorbers Characterization and Evaluation of Materials Chemistry and Materials Science Copper sulfides Electrical properties Grain size Materials Science Optical and Electronic Materials Optical properties Photovoltaic cells Solar cells Sulfurization Thin films |
| title | Effect of sulfurization process on the properties of solution-processed Cu2SnS3 thin film solar cells |
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