Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon

Oxides containing group III or group V elements (B2O3/Sb2O5 and P2O5/Sb2O5) are grown by plasma‐assisted atomic layer deposition (ALD) on single‐crystalline silicon and serve as dopant sources for conformal and shallow doping. Transport phenomena in ALD‐oxide–Si structures during rapid thermal annea...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2019-09, Vol.216 (17), p.n/a
Hauptverfasser:	Beljakowa, Svetlana, Pichler, Peter, Kalkofen, Bodo, Hübner, René
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Antimony oxides atomic layer deposition Atomic layer epitaxy Boron Boron oxides Clustering cross-sectional transmission electron microscopy Crystal structure Crystallinity Diffusion layers dopant clusters dopant diffusion dopant-containing oxides Dopants Doping Interstitials Ions Phosphorus Phosphorus pentoxide Photoelectrons Precipitates Secondary ion mass spectrometry silicon doping Silicon oxides Silicon substrates Solid solubility Transmission electron microscopy Transport phenomena X ray photoelectron spectroscopy
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