Boron–Oxygen Complex Responsible for Light‐Induced Degradation in Silicon Photovoltaic Cells: A New Insight into the Problem

Results available in the literature on minority carrier trapping and light‐induced degradation (LID) effects in silicon materials containing boron and oxygen atoms are briefly reviewed. Special attention is paid to the phenomena associated with “deep” electron traps (J. A. Hornbeck and J. R. Haynes,...

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Veröffentlicht in:Physica status solidi. A, Applications and materials science Applications and materials science, 2019-09, Vol.216 (17), p.n/a
Hauptverfasser: Markevich, Vladimir P., Vaqueiro-Contreras, Michelle, De Guzman, Joyce T., Coutinho, José, Santos, Paulo, Crowe, Iain F., Halsall, Matthew P., Hawkins, Ian, Lastovskii, Stanislau B., Murin, Leonid I., Peaker, Anthony R.
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Sprache:eng
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