Dynamics of crosshatch patterns in heteroepitaxy
Regular surface undulations, called cross-hatch patterns, appearing at the free surface of lattice-mismatched heteroepitaxial films are a key signature of plastic relaxation. Here we show that the dynamics of cross-hatch formation is accurately described by a continuum model based on strain-mediated...
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Veröffentlicht in: | Physical review. B 2019-08, Vol.100 (8), p.1, Article 085307 |
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creator | Rovaris, Fabrizio Zoellner, Marvin H. Zaumseil, Peter Marzegalli, Anna Di Gaspare, Luciana De Seta, Monica Schroeder, Thomas Storck, Peter Schwalb, Georg Capellini, Giovanni Montalenti, Francesco |
description | Regular surface undulations, called cross-hatch patterns, appearing at the free surface of lattice-mismatched heteroepitaxial films are a key signature of plastic relaxation. Here we show that the dynamics of cross-hatch formation is accurately described by a continuum model based on strain-mediated surface diffusion, provided that a realistic distribution of dislocations is considered. We demonstrate quantitative agreement between our time-dependent simulations and dedicated atomic force microscopy experiments on Si0.92Ge0.08 films grown on Si(001) at various thicknesses, finally shedding light on the origin and on the dynamical behavior of a widely investigated pattern, first observed more than half a century ago. |
doi_str_mv | 10.1103/PhysRevB.100.085307 |
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subjects | Atomic force microscopy Computer simulation Continuum modeling Dislocations Free surfaces Silicon substrates Surface diffusion Time dependent analysis |
title | Dynamics of crosshatch patterns in heteroepitaxy |
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