Broadband near-IR photoluminescence in Ni2+ doped gallium silicate glass–ceramics
Broadband and tunable near-infrared (NIR) emission of Ni 2+ doped glass–ceramics (GCs) is highly attractive due to their potential to address the challenge of broadband optical amplification in the optical communication band. However, optical activity of Ni 2+ in different glass matrix as well as nu...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2019-10, Vol.30 (19), p.17715-17724 |
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| creator | Basore, Endale T. Liu, Xiaofeng Qiu, Jianrong |
| description | Broadband and tunable near-infrared (NIR) emission of Ni
2+
doped glass–ceramics (GCs) is highly attractive due to their potential to address the challenge of broadband optical amplification in the optical communication band. However, optical activity of Ni
2+
in different glass matrix as well as nucleation and crystallization processes in relevant glasses have not been understood fully. Here, broadband NIR photoluminescence was realized through precipitation of LiGa
5
O
8
:Ni
2+
nanocrystals (NCs) within an alkali gallium-silicate glass matrix by melt-quenching and successive heat treatment. Upon exciting by a 980 nm laser diode, we observed NIR photoluminescence band centered at ~ 1310 nm with full width at half maximum of wider than 300 nm, which was originated from
3
T
2g
(
3
F) →
3
A
2g
(
3
F) electronic transition of octahedral coordinated Ni
2+
in LiGa
5
O
8
NCs embedded in the GCs. Controlled precipitation of NCs, LiGa
5
O
8
:Ni
2+
and Ga
2
O
3
:Ni
2+
were achieved by tailoring the composition of alkali gallium-silicate glass matrix. ab initio molecular dynamics simulation was carried out to clarify the formation of nanophases in the glass system. We confirmed that optical properties of transparent GCs containing Ni
2+
NCs can be realized by changing molar percentages of Ga
2
O
3
. Our results offer a new insight into the precipitation of NCs in oxide glasses and Ni
2+
doped GCs, which may be applicable in the photonic fields, such as optical amplifier and laser. |
| doi_str_mv | 10.1007/s10854-019-02121-2 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2286045721</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2286045721</sourcerecordid><originalsourceid>FETCH-LOGICAL-c249t-c069438883945a471e6954484c4a1d47ab605e0996bdf1051d4a010c05eee3293</originalsourceid><addsrcrecordid>eNp9kMtKAzEUhoMoWKsv4CrgUqInmWRmslTxUigKXsBdSDOnNWVuJp2FO9_BN_RJjI7gztWBn_9y-Ag55HDCAYrTyKFUkgHXDAQXnIktMuGqyJgsxfM2mYBWBZNKiF2yF-MaAHKZlRPycB46Wy1sW9EWbWCze9q_dJuuHhrfYnTYOqS-pbdeHNOq67GiK1vXfmho9LV3doN0VdsYP98_HAbbeBf3yc7S1hEPfu-UPF1dPl7csPnd9ezibM6ckHrDHOQ6_VCWmZbKyoJjrpWUpXTS8koWdpGDQtA6X1RLDippFji4JCJmQmdTcjT29qF7HTBuzLobQpsmjRBlDlIVgieXGF0udDEGXJo--MaGN8PBfMMzIzyT4JkfeEakUDaGYjK3Kwx_1f-kvgBePHF1</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2286045721</pqid></control><display><type>article</type><title>Broadband near-IR photoluminescence in Ni2+ doped gallium silicate glass–ceramics</title><source>SpringerLink Journals</source><creator>Basore, Endale T. ; Liu, Xiaofeng ; Qiu, Jianrong</creator><creatorcontrib>Basore, Endale T. ; Liu, Xiaofeng ; Qiu, Jianrong</creatorcontrib><description>Broadband and tunable near-infrared (NIR) emission of Ni
2+
doped glass–ceramics (GCs) is highly attractive due to their potential to address the challenge of broadband optical amplification in the optical communication band. However, optical activity of Ni
2+
in different glass matrix as well as nucleation and crystallization processes in relevant glasses have not been understood fully. Here, broadband NIR photoluminescence was realized through precipitation of LiGa
5
O
8
:Ni
2+
nanocrystals (NCs) within an alkali gallium-silicate glass matrix by melt-quenching and successive heat treatment. Upon exciting by a 980 nm laser diode, we observed NIR photoluminescence band centered at ~ 1310 nm with full width at half maximum of wider than 300 nm, which was originated from
3
T
2g
(
3
F) →
3
A
2g
(
3
F) electronic transition of octahedral coordinated Ni
2+
in LiGa
5
O
8
NCs embedded in the GCs. Controlled precipitation of NCs, LiGa
5
O
8
:Ni
2+
and Ga
2
O
3
:Ni
2+
were achieved by tailoring the composition of alkali gallium-silicate glass matrix. ab initio molecular dynamics simulation was carried out to clarify the formation of nanophases in the glass system. We confirmed that optical properties of transparent GCs containing Ni
2+
NCs can be realized by changing molar percentages of Ga
2
O
3
. Our results offer a new insight into the precipitation of NCs in oxide glasses and Ni
2+
doped GCs, which may be applicable in the photonic fields, such as optical amplifier and laser.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-019-02121-2</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Broadband ; Ceramics ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Computer simulation ; Crystallization ; Gallium oxides ; Glass ceramics ; Heat treatment ; Lasers ; Materials Science ; Molecular dynamics ; Nanocrystals ; Near infrared radiation ; Nucleation ; Optical activity ; Optical and Electronic Materials ; Optical communication ; Optical properties ; Photoluminescence ; Photonics ; Semiconductor lasers ; Spectrum analysis</subject><ispartof>Journal of materials science. Materials in electronics, 2019-10, Vol.30 (19), p.17715-17724</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2019</rights><rights>Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2019). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c249t-c069438883945a471e6954484c4a1d47ab605e0996bdf1051d4a010c05eee3293</citedby><cites>FETCH-LOGICAL-c249t-c069438883945a471e6954484c4a1d47ab605e0996bdf1051d4a010c05eee3293</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-019-02121-2$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-019-02121-2$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Basore, Endale T.</creatorcontrib><creatorcontrib>Liu, Xiaofeng</creatorcontrib><creatorcontrib>Qiu, Jianrong</creatorcontrib><title>Broadband near-IR photoluminescence in Ni2+ doped gallium silicate glass–ceramics</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>Broadband and tunable near-infrared (NIR) emission of Ni
2+
doped glass–ceramics (GCs) is highly attractive due to their potential to address the challenge of broadband optical amplification in the optical communication band. However, optical activity of Ni
2+
in different glass matrix as well as nucleation and crystallization processes in relevant glasses have not been understood fully. Here, broadband NIR photoluminescence was realized through precipitation of LiGa
5
O
8
:Ni
2+
nanocrystals (NCs) within an alkali gallium-silicate glass matrix by melt-quenching and successive heat treatment. Upon exciting by a 980 nm laser diode, we observed NIR photoluminescence band centered at ~ 1310 nm with full width at half maximum of wider than 300 nm, which was originated from
3
T
2g
(
3
F) →
3
A
2g
(
3
F) electronic transition of octahedral coordinated Ni
2+
in LiGa
5
O
8
NCs embedded in the GCs. Controlled precipitation of NCs, LiGa
5
O
8
:Ni
2+
and Ga
2
O
3
:Ni
2+
were achieved by tailoring the composition of alkali gallium-silicate glass matrix. ab initio molecular dynamics simulation was carried out to clarify the formation of nanophases in the glass system. We confirmed that optical properties of transparent GCs containing Ni
2+
NCs can be realized by changing molar percentages of Ga
2
O
3
. Our results offer a new insight into the precipitation of NCs in oxide glasses and Ni
2+
doped GCs, which may be applicable in the photonic fields, such as optical amplifier and laser.</description><subject>Broadband</subject><subject>Ceramics</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Computer simulation</subject><subject>Crystallization</subject><subject>Gallium oxides</subject><subject>Glass ceramics</subject><subject>Heat treatment</subject><subject>Lasers</subject><subject>Materials Science</subject><subject>Molecular dynamics</subject><subject>Nanocrystals</subject><subject>Near infrared radiation</subject><subject>Nucleation</subject><subject>Optical activity</subject><subject>Optical and Electronic Materials</subject><subject>Optical communication</subject><subject>Optical properties</subject><subject>Photoluminescence</subject><subject>Photonics</subject><subject>Semiconductor lasers</subject><subject>Spectrum analysis</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp9kMtKAzEUhoMoWKsv4CrgUqInmWRmslTxUigKXsBdSDOnNWVuJp2FO9_BN_RJjI7gztWBn_9y-Ag55HDCAYrTyKFUkgHXDAQXnIktMuGqyJgsxfM2mYBWBZNKiF2yF-MaAHKZlRPycB46Wy1sW9EWbWCze9q_dJuuHhrfYnTYOqS-pbdeHNOq67GiK1vXfmho9LV3doN0VdsYP98_HAbbeBf3yc7S1hEPfu-UPF1dPl7csPnd9ezibM6ckHrDHOQ6_VCWmZbKyoJjrpWUpXTS8koWdpGDQtA6X1RLDippFji4JCJmQmdTcjT29qF7HTBuzLobQpsmjRBlDlIVgieXGF0udDEGXJo--MaGN8PBfMMzIzyT4JkfeEakUDaGYjK3Kwx_1f-kvgBePHF1</recordid><startdate>20191001</startdate><enddate>20191001</enddate><creator>Basore, Endale T.</creator><creator>Liu, Xiaofeng</creator><creator>Qiu, Jianrong</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope></search><sort><creationdate>20191001</creationdate><title>Broadband near-IR photoluminescence in Ni2+ doped gallium silicate glass–ceramics</title><author>Basore, Endale T. ; Liu, Xiaofeng ; Qiu, Jianrong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c249t-c069438883945a471e6954484c4a1d47ab605e0996bdf1051d4a010c05eee3293</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Broadband</topic><topic>Ceramics</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Computer simulation</topic><topic>Crystallization</topic><topic>Gallium oxides</topic><topic>Glass ceramics</topic><topic>Heat treatment</topic><topic>Lasers</topic><topic>Materials Science</topic><topic>Molecular dynamics</topic><topic>Nanocrystals</topic><topic>Near infrared radiation</topic><topic>Nucleation</topic><topic>Optical activity</topic><topic>Optical and Electronic Materials</topic><topic>Optical communication</topic><topic>Optical properties</topic><topic>Photoluminescence</topic><topic>Photonics</topic><topic>Semiconductor lasers</topic><topic>Spectrum analysis</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Basore, Endale T.</creatorcontrib><creatorcontrib>Liu, Xiaofeng</creatorcontrib><creatorcontrib>Qiu, Jianrong</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Basore, Endale T.</au><au>Liu, Xiaofeng</au><au>Qiu, Jianrong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Broadband near-IR photoluminescence in Ni2+ doped gallium silicate glass–ceramics</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2019-10-01</date><risdate>2019</risdate><volume>30</volume><issue>19</issue><spage>17715</spage><epage>17724</epage><pages>17715-17724</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Broadband and tunable near-infrared (NIR) emission of Ni
2+
doped glass–ceramics (GCs) is highly attractive due to their potential to address the challenge of broadband optical amplification in the optical communication band. However, optical activity of Ni
2+
in different glass matrix as well as nucleation and crystallization processes in relevant glasses have not been understood fully. Here, broadband NIR photoluminescence was realized through precipitation of LiGa
5
O
8
:Ni
2+
nanocrystals (NCs) within an alkali gallium-silicate glass matrix by melt-quenching and successive heat treatment. Upon exciting by a 980 nm laser diode, we observed NIR photoluminescence band centered at ~ 1310 nm with full width at half maximum of wider than 300 nm, which was originated from
3
T
2g
(
3
F) →
3
A
2g
(
3
F) electronic transition of octahedral coordinated Ni
2+
in LiGa
5
O
8
NCs embedded in the GCs. Controlled precipitation of NCs, LiGa
5
O
8
:Ni
2+
and Ga
2
O
3
:Ni
2+
were achieved by tailoring the composition of alkali gallium-silicate glass matrix. ab initio molecular dynamics simulation was carried out to clarify the formation of nanophases in the glass system. We confirmed that optical properties of transparent GCs containing Ni
2+
NCs can be realized by changing molar percentages of Ga
2
O
3
. Our results offer a new insight into the precipitation of NCs in oxide glasses and Ni
2+
doped GCs, which may be applicable in the photonic fields, such as optical amplifier and laser.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-019-02121-2</doi><tpages>10</tpages></addata></record> |
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| issn | 0957-4522 1573-482X |
| language | eng |
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| subjects | Broadband Ceramics Characterization and Evaluation of Materials Chemistry and Materials Science Computer simulation Crystallization Gallium oxides Glass ceramics Heat treatment Lasers Materials Science Molecular dynamics Nanocrystals Near infrared radiation Nucleation Optical activity Optical and Electronic Materials Optical communication Optical properties Photoluminescence Photonics Semiconductor lasers Spectrum analysis |
| title | Broadband near-IR photoluminescence in Ni2+ doped gallium silicate glass–ceramics |
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