Cause analysis of the faults in HARC etching processes by using the PI‐VM model for OLED display manufacturing

High‐aspect ratio contact (HARC) etching is a bottleneck step of the high‐definition organic light emitting diode (OLED) display manufacturing processes. HARC process is frequently failed during the mass production, because this requires the high‐energy ion flux and the sidewall passivation, simulta...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Plasma processes and polymers 2019-09, Vol.16 (9), p.n/a
Hauptverfasser:	Park, Seolhye, Kyung, Yunyoung, Lee, Juyoung, Jang, Yongsuk, Cha, Taewon, Noh, Yeongil, Choi, Younghoon, Kim, Byungsoo, Cho, Taeyoung, Seo, Rabul, Yang, Jae‐Ho, Jang, Yunchang, Ryu, Sangwon, Kim, Gon‐Ho
Format:	Artikel
Sprache:	eng
Schlagworte:	Algorithms Aspect ratio cause analysis dry etch Etching fault prediction Ion flux Manufacturing Mass production Optical emission spectroscopy Organic light emitting diodes plasma information virtual metrology
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!