Selective etching of fs-laser inscribed high aspect ratio microstructures in YAG

We report on a systematic investigation of selective etching of fs-laser inscribed microstructures in Y3Al5O12 (YAG). The resulting microchannels are up to 8.9 mm long and exhibit cross sections from below 10 µm to more than 100 µm. Aspect ratios of up to 593 were achieved. Investigations with diffe...

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Veröffentlicht in:	Optical materials express 2019-09, Vol.9 (9), p.3627
Hauptverfasser:	Hasse, Kore, Huber, Günter, Kränkel, Christian
Format:	Artikel
Sprache:	eng
Schlagworte:	Brownian motion Diffusion Etching High aspect ratio Microchannels Phosphoric acid Time dependence Yttrium-aluminum garnet
Online-Zugang:	Volltext
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