Combined effects of pressure, temperature, and magnetic field on the ground state of donor impurities in a GaAs/AlGaAs quantum heterostructure

In the present work, the exact diagonalization method had been implemented to calculate the ground state energy of shallow donor impurity located at finite distance along the growth axis in GaAs/AlGaAs heterostructure in the presence of a magnetic field taken to be along z direction. The impurity bi...

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Veröffentlicht in:	International journal of nano dimension 2019-10, Vol.10 (4), p.420-434
Hauptverfasser:	Abuzaid, Samah, Shaer, Ayham, Elsaid, Mohammad
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium arsenides Binding energy Electric fields Energy Field strength Gallium arsenide Ground state Heterostructures Impurities Magnetic fields Magnetism Mathematical analysis Pressure effects Quantum dots Temperature effects
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