Combined effects of pressure, temperature, and magnetic field on the ground state of donor impurities in a GaAs/AlGaAs quantum heterostructure
In the present work, the exact diagonalization method had been implemented to calculate the ground state energy of shallow donor impurity located at finite distance along the growth axis in GaAs/AlGaAs heterostructure in the presence of a magnetic field taken to be along z direction. The impurity bi...
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| Veröffentlicht in: | International journal of nano dimension 2019-10, Vol.10 (4), p.420-434 |
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| creator | Abuzaid, Samah Shaer, Ayham Elsaid, Mohammad |
| description | In the present work, the exact diagonalization method had been implemented to calculate the ground state energy of shallow donor impurity located at finite distance along the growth axis in GaAs/AlGaAs heterostructure in the presence of a magnetic field taken to be along z direction. The impurity binding energy of the ground state had been calculated as a function of confining frequency and magnetic field strength. We found that the ground state donor binding energy (BE) calculated at ωc =2 R · and ω0 = 5.421R · , decreases from BE=7.59822 R· to BE=2.85165 R·, as we change the impurity position from d=0.0 a to d=0.5 a· , respectively .In addition, the combined effects of pressure and temperature on the binding energy, as a function of magnetic field strength and impurity position, had been shown using the effective-mass approximation. The numerical results show that the donor impurity binding energy enhances with increasing the pressure while it decreases as the temperature decreases. |
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The impurity binding energy of the ground state had been calculated as a function of confining frequency and magnetic field strength. We found that the ground state donor binding energy (BE) calculated at ωc =2 R · and ω0 = 5.421R · , decreases from BE=7.59822 R· to BE=2.85165 R·, as we change the impurity position from d=0.0 a to d=0.5 a· , respectively .In addition, the combined effects of pressure and temperature on the binding energy, as a function of magnetic field strength and impurity position, had been shown using the effective-mass approximation. The numerical results show that the donor impurity binding energy enhances with increasing the pressure while it decreases as the temperature decreases.</description><identifier>ISSN: 2008-8868</identifier><identifier>EISSN: 2228-5059</identifier><language>eng</language><publisher>Witney: OICC Press</publisher><subject>Aluminum gallium arsenides ; Binding energy ; Electric fields ; Energy ; Field strength ; Gallium arsenide ; Ground state ; Heterostructures ; Impurities ; Magnetic fields ; Magnetism ; Mathematical analysis ; Pressure effects ; Quantum dots ; Temperature effects</subject><ispartof>International journal of nano dimension, 2019-10, Vol.10 (4), p.420-434</ispartof><rights>Copyright International Journal of Nano Dimension (IJND) Autumn 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784</link.rule.ids></links><search><creatorcontrib>Abuzaid, Samah</creatorcontrib><creatorcontrib>Shaer, Ayham</creatorcontrib><creatorcontrib>Elsaid, Mohammad</creatorcontrib><title>Combined effects of pressure, temperature, and magnetic field on the ground state of donor impurities in a GaAs/AlGaAs quantum heterostructure</title><title>International journal of nano dimension</title><description>In the present work, the exact diagonalization method had been implemented to calculate the ground state energy of shallow donor impurity located at finite distance along the growth axis in GaAs/AlGaAs heterostructure in the presence of a magnetic field taken to be along z direction. The impurity binding energy of the ground state had been calculated as a function of confining frequency and magnetic field strength. We found that the ground state donor binding energy (BE) calculated at ωc =2 R · and ω0 = 5.421R · , decreases from BE=7.59822 R· to BE=2.85165 R·, as we change the impurity position from d=0.0 a to d=0.5 a· , respectively .In addition, the combined effects of pressure and temperature on the binding energy, as a function of magnetic field strength and impurity position, had been shown using the effective-mass approximation. 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| subjects | Aluminum gallium arsenides Binding energy Electric fields Energy Field strength Gallium arsenide Ground state Heterostructures Impurities Magnetic fields Magnetism Mathematical analysis Pressure effects Quantum dots Temperature effects |
| title | Combined effects of pressure, temperature, and magnetic field on the ground state of donor impurities in a GaAs/AlGaAs quantum heterostructure |
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