The conductive heterojunctuon device of graphene and MoS2
This paper reports the estimation of graphene thickness, done by the intensity ratio of the 2D band to the G band and the ration is found to be 1.91 which suggests, it is monolayer and bilayer MoS2. The RAMAN spectra shows presence of crystalline defects, considering high D/G ratio. The heterostruct...
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| creator | Tomar, Rupika Singh Taiwade, Kajol Ojha, Pragya |
| description | This paper reports the estimation of graphene thickness, done by the intensity ratio of the 2D band to the G band and the ration is found to be 1.91 which suggests, it is monolayer and bilayer MoS2. The RAMAN spectra shows presence of crystalline defects, considering high D/G ratio. The heterostructure device synthesized shows linear conductivity, making it a conductive device. These devices exhibit a promising device for a new generation of transparent, high performance, high response gas sensors and optoelectronic devices. The heterostructure device of graphene and MoS2 show promise for enhanced performance in photo detectors and phototransistors; with electrostatic coupling and high current capacity. This synthesis approach is used to fabricate a MoS2/Graphene on copper foil by growing large scale uniform MoS2 on graphene. |
| doi_str_mv | 10.1063/1.5122514 |
| format | Conference Proceeding |
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The RAMAN spectra shows presence of crystalline defects, considering high D/G ratio. The heterostructure device synthesized shows linear conductivity, making it a conductive device. These devices exhibit a promising device for a new generation of transparent, high performance, high response gas sensors and optoelectronic devices. The heterostructure device of graphene and MoS2 show promise for enhanced performance in photo detectors and phototransistors; with electrostatic coupling and high current capacity. This synthesis approach is used to fabricate a MoS2/Graphene on copper foil by growing large scale uniform MoS2 on graphene.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/1.5122514</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Bilayers ; Conductivity ; Crystal defects ; G ratio ; Gas sensors ; Graphene ; Heterostructures ; Metal foils ; Molybdenum disulfide ; Optoelectronic devices ; Performance enhancement ; Phototransistors ; Raman spectra</subject><ispartof>AIP conference proceedings, 2019, Vol.2142 (1)</ispartof><rights>Author(s)</rights><rights>2019 Author(s). 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The RAMAN spectra shows presence of crystalline defects, considering high D/G ratio. The heterostructure device synthesized shows linear conductivity, making it a conductive device. These devices exhibit a promising device for a new generation of transparent, high performance, high response gas sensors and optoelectronic devices. The heterostructure device of graphene and MoS2 show promise for enhanced performance in photo detectors and phototransistors; with electrostatic coupling and high current capacity. This synthesis approach is used to fabricate a MoS2/Graphene on copper foil by growing large scale uniform MoS2 on graphene.</description><subject>Bilayers</subject><subject>Conductivity</subject><subject>Crystal defects</subject><subject>G ratio</subject><subject>Gas sensors</subject><subject>Graphene</subject><subject>Heterostructures</subject><subject>Metal foils</subject><subject>Molybdenum disulfide</subject><subject>Optoelectronic devices</subject><subject>Performance enhancement</subject><subject>Phototransistors</subject><subject>Raman spectra</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2019</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNp9kEFLAzEUhIMoWKsH_0HAm7A1L9lsNkcpWoWKByt4C2ny1m7RZM1mC_57V1rwJgzMHD7mPYaQS2AzYJW4gZkEziWUR2QCUkKhKqiOyYQxXRa8FG-n5Kzvt4xxrVQ9IXq1Qepi8IPL7Q7pBjOmuB2Cy0MM1OOudUhjQ9-T7TYYkNrg6VN84efkpLEfPV4cfEpe7-9W84di-bx4nN8ui45LkQtblwq1ckwJPv7gpBVlA9Y1Y1grrlGAByfXomqwZlhb7f0aaqh4pbSSTkzJ1b63S_FrwD6bbRxSGE8azutRUgsxUtd7qndttrmNwXSp_bTp2wAzv9MYMIdp_oN3Mf2BpvON-AG4H2L9</recordid><startdate>20190829</startdate><enddate>20190829</enddate><creator>Tomar, Rupika Singh</creator><creator>Taiwade, Kajol</creator><creator>Ojha, Pragya</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20190829</creationdate><title>The conductive heterojunctuon device of graphene and MoS2</title><author>Tomar, Rupika Singh ; Taiwade, Kajol ; Ojha, Pragya</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p253t-a847e97c0732094c5a34f1acf5a3b729e31d1c5b36fe80e8a9ddb1816267975c3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Bilayers</topic><topic>Conductivity</topic><topic>Crystal defects</topic><topic>G ratio</topic><topic>Gas sensors</topic><topic>Graphene</topic><topic>Heterostructures</topic><topic>Metal foils</topic><topic>Molybdenum disulfide</topic><topic>Optoelectronic devices</topic><topic>Performance enhancement</topic><topic>Phototransistors</topic><topic>Raman spectra</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tomar, Rupika Singh</creatorcontrib><creatorcontrib>Taiwade, Kajol</creatorcontrib><creatorcontrib>Ojha, Pragya</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tomar, Rupika Singh</au><au>Taiwade, Kajol</au><au>Ojha, Pragya</au><au>Singh, Vijender</au><au>Ghosh, Arindam</au><au>Gaur, Sanjay</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The conductive heterojunctuon device of graphene and MoS2</atitle><btitle>AIP conference proceedings</btitle><date>2019-08-29</date><risdate>2019</risdate><volume>2142</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>This paper reports the estimation of graphene thickness, done by the intensity ratio of the 2D band to the G band and the ration is found to be 1.91 which suggests, it is monolayer and bilayer MoS2. The RAMAN spectra shows presence of crystalline defects, considering high D/G ratio. The heterostructure device synthesized shows linear conductivity, making it a conductive device. These devices exhibit a promising device for a new generation of transparent, high performance, high response gas sensors and optoelectronic devices. The heterostructure device of graphene and MoS2 show promise for enhanced performance in photo detectors and phototransistors; with electrostatic coupling and high current capacity. This synthesis approach is used to fabricate a MoS2/Graphene on copper foil by growing large scale uniform MoS2 on graphene.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5122514</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2019, Vol.2142 (1) |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_proquest_journals_2282285933 |
| source | AIP Journals Complete |
| subjects | Bilayers Conductivity Crystal defects G ratio Gas sensors Graphene Heterostructures Metal foils Molybdenum disulfide Optoelectronic devices Performance enhancement Phototransistors Raman spectra |
| title | The conductive heterojunctuon device of graphene and MoS2 |
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