Sputtering of silicon thin films for passivated contacts
We investigate SiOx/poly-Si layer stacks produced by sputter deposition of silicon for use as charge carrier selective passivated contacts. Excellent passivation quality with implied open circuit voltages up to 735 mV and Jo = (5.2 ± 0.8) fA/cm2 are demonstrated for n+ doped poly-Si on 1-5 Ωcm saw-d...
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| creator | Hoß, Jan Baumann, Jens Berendt, Markus Graupner, Uwe Köhler, René Lossen, Jan Thumsch, Martin Schneiderlöchner, Eric |
| description | We investigate SiOx/poly-Si layer stacks produced by sputter deposition of silicon for use as charge carrier selective passivated contacts. Excellent passivation quality with implied open circuit voltages up to 735 mV and Jo = (5.2 ± 0.8) fA/cm2 are demonstrated for n+ doped poly-Si on 1-5 Ωcm saw-damage etched n-type CZ wafers. Layers of intrinsic a-Si with a thickness of 100 nm have been deposited on a wet chemically grown SiOx layer. Subsequently, a tube furnace process was used for doping the layers by POCl3 diffusion and simultaneous solid phase crystallization to poly-Si. All layers remain free of blistering after all process steps, including PECVD SiNx deposition for hydrogenation and a thermal treatment mimicking the contact firing process of screen printed solar cells. The influence of different deposition conditions, as well as diffusion and annealing parameters on the passivation quality are discussed and layers produced with different sputter platforms, including a lab-type device and an industrially relevant inline tool with rotatable magnetrons, are compared. |
| doi_str_mv | 10.1063/1.5123834 |
| format | Conference Proceeding |
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Excellent passivation quality with implied open circuit voltages up to 735 mV and Jo = (5.2 ± 0.8) fA/cm2 are demonstrated for n+ doped poly-Si on 1-5 Ωcm saw-damage etched n-type CZ wafers. Layers of intrinsic a-Si with a thickness of 100 nm have been deposited on a wet chemically grown SiOx layer. Subsequently, a tube furnace process was used for doping the layers by POCl3 diffusion and simultaneous solid phase crystallization to poly-Si. All layers remain free of blistering after all process steps, including PECVD SiNx deposition for hydrogenation and a thermal treatment mimicking the contact firing process of screen printed solar cells. 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Excellent passivation quality with implied open circuit voltages up to 735 mV and Jo = (5.2 ± 0.8) fA/cm2 are demonstrated for n+ doped poly-Si on 1-5 Ωcm saw-damage etched n-type CZ wafers. Layers of intrinsic a-Si with a thickness of 100 nm have been deposited on a wet chemically grown SiOx layer. Subsequently, a tube furnace process was used for doping the layers by POCl3 diffusion and simultaneous solid phase crystallization to poly-Si. All layers remain free of blistering after all process steps, including PECVD SiNx deposition for hydrogenation and a thermal treatment mimicking the contact firing process of screen printed solar cells. The influence of different deposition conditions, as well as diffusion and annealing parameters on the passivation quality are discussed and layers produced with different sputter platforms, including a lab-type device and an industrially relevant inline tool with rotatable magnetrons, are compared.</description><subject>Blistering</subject><subject>Chemical vapor deposition</subject><subject>Circuits</subject><subject>Crystallization</subject><subject>Current carriers</subject><subject>Diffusion layers</subject><subject>Heat treatment</subject><subject>Magnetrons</subject><subject>Organic chemistry</subject><subject>Passivity</subject><subject>Photovoltaic cells</subject><subject>Silicon films</subject><subject>Solar cells</subject><subject>Solid phases</subject><subject>Thin films</subject><subject>Tube furnaces</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2019</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNp9kEtLAzEYRYMoOFYX_oOAO2Fq8uU5Sym-oOBCBXchM5NoSjsZk7Tgv3ekBXeu7uIc7oWL0CUlc0oku6FzQYFpxo9QRYWgtZJUHqOKkIbXwNn7KTrLeUUINErpCumXcVuKS2H4wNHjHNahiwMun2HAPqw3GfuY8GhzDjtbXI8nWmxX8jk68Xad3cUhZ-jt_u518Vgvnx-eFrfLumOgSy1BAFNWMu0kWCt0L3Sr-lYSz1vXt9p3yoN3ijSqdb7nXBGYkJgQBe7ZDF3te8cUv7YuF7OK2zRMkwZAE80F4TBZ13srd6HYEuJgxhQ2Nn0bSszvM4aawzP_ybuY_kQz9p79AEtTZA4</recordid><startdate>20190827</startdate><enddate>20190827</enddate><creator>Hoß, Jan</creator><creator>Baumann, Jens</creator><creator>Berendt, Markus</creator><creator>Graupner, Uwe</creator><creator>Köhler, René</creator><creator>Lossen, Jan</creator><creator>Thumsch, Martin</creator><creator>Schneiderlöchner, Eric</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20190827</creationdate><title>Sputtering of silicon thin films for passivated contacts</title><author>Hoß, Jan ; Baumann, Jens ; Berendt, Markus ; Graupner, Uwe ; Köhler, René ; Lossen, Jan ; Thumsch, Martin ; Schneiderlöchner, Eric</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c328t-625237a638e62aa58d58b7db60f4bedb8fc7f2fe7097befd44702f4b5db8124f3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Blistering</topic><topic>Chemical vapor deposition</topic><topic>Circuits</topic><topic>Crystallization</topic><topic>Current carriers</topic><topic>Diffusion layers</topic><topic>Heat treatment</topic><topic>Magnetrons</topic><topic>Organic chemistry</topic><topic>Passivity</topic><topic>Photovoltaic cells</topic><topic>Silicon films</topic><topic>Solar cells</topic><topic>Solid phases</topic><topic>Thin films</topic><topic>Tube furnaces</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hoß, Jan</creatorcontrib><creatorcontrib>Baumann, Jens</creatorcontrib><creatorcontrib>Berendt, Markus</creatorcontrib><creatorcontrib>Graupner, Uwe</creatorcontrib><creatorcontrib>Köhler, René</creatorcontrib><creatorcontrib>Lossen, Jan</creatorcontrib><creatorcontrib>Thumsch, Martin</creatorcontrib><creatorcontrib>Schneiderlöchner, Eric</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hoß, Jan</au><au>Baumann, Jens</au><au>Berendt, Markus</au><au>Graupner, Uwe</au><au>Köhler, René</au><au>Lossen, Jan</au><au>Thumsch, Martin</au><au>Schneiderlöchner, Eric</au><au>Poortmans, Jef</au><au>Ballif, Christophe</au><au>Glunz, Stefan</au><au>Weeber, Arthur</au><au>Hahn, Giso</au><au>Brendel, Rolf</au><au>Dubois, Sébastien</au><au>Verlinden, Pierre</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Sputtering of silicon thin films for passivated contacts</atitle><btitle>AIP conference proceedings</btitle><date>2019-08-27</date><risdate>2019</risdate><volume>2147</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>We investigate SiOx/poly-Si layer stacks produced by sputter deposition of silicon for use as charge carrier selective passivated contacts. Excellent passivation quality with implied open circuit voltages up to 735 mV and Jo = (5.2 ± 0.8) fA/cm2 are demonstrated for n+ doped poly-Si on 1-5 Ωcm saw-damage etched n-type CZ wafers. Layers of intrinsic a-Si with a thickness of 100 nm have been deposited on a wet chemically grown SiOx layer. Subsequently, a tube furnace process was used for doping the layers by POCl3 diffusion and simultaneous solid phase crystallization to poly-Si. All layers remain free of blistering after all process steps, including PECVD SiNx deposition for hydrogenation and a thermal treatment mimicking the contact firing process of screen printed solar cells. The influence of different deposition conditions, as well as diffusion and annealing parameters on the passivation quality are discussed and layers produced with different sputter platforms, including a lab-type device and an industrially relevant inline tool with rotatable magnetrons, are compared.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5123834</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2019, Vol.2147 (1) |
| issn | 0094-243X 1551-7616 |
| language | eng |
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| source | AIP Journals Complete |
| subjects | Blistering Chemical vapor deposition Circuits Crystallization Current carriers Diffusion layers Heat treatment Magnetrons Organic chemistry Passivity Photovoltaic cells Silicon films Solar cells Solid phases Thin films Tube furnaces |
| title | Sputtering of silicon thin films for passivated contacts |
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