Large Spin-Orbit Splitting of Deep In-Gap Defect States of Engineered Sulfur Vacancies in Monolayer WS2
Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional doping. We report on the direct experimental correlation of the atomic and electronic structure of a sulfur vacancy in monolayer WS2 by a combination of CO-tip noncontact atomic for...
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Veröffentlicht in: | Physical review letters 2019-08, Vol.123 (7), p.076801 |
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creator | Schuler, Bruno Qiu, Diana Y Refaely-Abramson, Sivan Kastl, Christoph Chen, Christopher T Barja, Sara Koch, Roland J Ogletree, D Frank Aloni, Shaul Schwartzberg, Adam M Neaton, Jeffrey B Louie, Steven G Weber-Bargioni, Alexander |
description | Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional doping. We report on the direct experimental correlation of the atomic and electronic structure of a sulfur vacancy in monolayer WS2 by a combination of CO-tip noncontact atomic force microscopy and scanning tunneling microscopy. Sulfur vacancies, which are absent in as-grown samples, were deliberately created by annealing in vacuum. Two energetically narrow unoccupied defect states followed by vibronic sidebands provide a unique fingerprint of this defect. Direct imaging of the defect orbitals, together with ab initio GW calculations, reveal that the large splitting of 252 ± 4 meV between these defect states is induced by spin-orbit coupling. |
doi_str_mv | 10.1103/PhysRevLett.123.076801 |
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We report on the direct experimental correlation of the atomic and electronic structure of a sulfur vacancy in monolayer WS2 by a combination of CO-tip noncontact atomic force microscopy and scanning tunneling microscopy. Sulfur vacancies, which are absent in as-grown samples, were deliberately created by annealing in vacuum. Two energetically narrow unoccupied defect states followed by vibronic sidebands provide a unique fingerprint of this defect. 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We report on the direct experimental correlation of the atomic and electronic structure of a sulfur vacancy in monolayer WS2 by a combination of CO-tip noncontact atomic force microscopy and scanning tunneling microscopy. Sulfur vacancies, which are absent in as-grown samples, were deliberately created by annealing in vacuum. Two energetically narrow unoccupied defect states followed by vibronic sidebands provide a unique fingerprint of this defect. 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We report on the direct experimental correlation of the atomic and electronic structure of a sulfur vacancy in monolayer WS2 by a combination of CO-tip noncontact atomic force microscopy and scanning tunneling microscopy. Sulfur vacancies, which are absent in as-grown samples, were deliberately created by annealing in vacuum. Two energetically narrow unoccupied defect states followed by vibronic sidebands provide a unique fingerprint of this defect. Direct imaging of the defect orbitals, together with ab initio GW calculations, reveal that the large splitting of 252 ± 4 meV between these defect states is induced by spin-orbit coupling.</abstract><cop>College Park</cop><pub>American Physical Society</pub><doi>10.1103/PhysRevLett.123.076801</doi><oa>free_for_read</oa></addata></record> |
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subjects | Atomic force microscopy Atomic structure Defects Electronic structure Microscopy Monolayers Sidebands Spin-orbit interactions Splitting Sulfur Two dimensional materials Vacancies |
title | Large Spin-Orbit Splitting of Deep In-Gap Defect States of Engineered Sulfur Vacancies in Monolayer WS2 |
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