Interrelation Between the Internal Quantum Efficiency and Forward Voltage of Blue LEDs
In InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs), carrier accumulation in MQWs due to the saturation of the radiative recombination rate affects the internal-quantum-efficiency (IQE) and forward-voltage (VF) characteristics simultaneously. In this letter, we investigate the inte...
Gespeichert in:
| Veröffentlicht in: | IEEE photonics technology letters 2019-09, Vol.31 (17), p.1441-1444 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1444 |
|---|---|
| container_issue | 17 |
| container_start_page | 1441 |
| container_title | IEEE photonics technology letters |
| container_volume | 31 |
| creator | Oh, Chan-Hyoung Shin, Dong-Soo Shim, Jong-In |
| description | In InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs), carrier accumulation in MQWs due to the saturation of the radiative recombination rate affects the internal-quantum-efficiency (IQE) and forward-voltage (VF) characteristics simultaneously. In this letter, we investigate the interrelation between the IQE and VF at an operating current density, using 31 blue LEDs with MQW active layers grown under slightly different conditions. The general trend observed demonstrates that VF decreases as the IQE increases. We analyze this interrelation between the IQE and VF through separation of radiative and nonradiative current densities, and propose to use the active efficiency (AE) to quantify the performance of the active layer more precisely. We examine the two cases where only the radiative (nonradiative) current density changes and establish that the increase of the radiative current density is more desirable than the decrease of the nonradiative current density in improving the AE of the device. |
| doi_str_mv | 10.1109/LPT.2019.2930756 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_2278395933</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8771130</ieee_id><sourcerecordid>2278395933</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-c3a8199afff8f40472b5ccdac10d2773dbf1dee975c8920d19143b4fa49dcd5f3</originalsourceid><addsrcrecordid>eNo9kNFLwzAQh4MoOKfvgi8BnztzTWqaRzc3HRRUmHsNWXLRjq6dScvYf2_nhk_3g_t-x_ERcgtsBMDUQ_G-GKUM1ChVnMns8YwMQAlIGEhx3mfWZwCeXZKrGNeMgci4GJDlvG4xBKxMWzY1HWO7Q6xp-430b1Obin50pm67DZ16X9oSa7unpnZ01oSdCY4um6o1X0gbT8dVh7SYPsdrcuFNFfHmNIfkczZdTF6T4u1lPnkqEpsqaBPLTQ5KGe997gUTMl1l1jpjgblUSu5WHhyikpnNVcocKBB8JbwRylmXeT4k98e729D8dBhbvW66w9NRp6nMucoU5z3FjpQNTYwBvd6GcmPCXgPTB3u6t6cP9vTJXl-5O1ZKRPzHcyl7h4z_Akksa2k</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2278395933</pqid></control><display><type>article</type><title>Interrelation Between the Internal Quantum Efficiency and Forward Voltage of Blue LEDs</title><source>IEEE Electronic Library (IEL)</source><creator>Oh, Chan-Hyoung ; Shin, Dong-Soo ; Shim, Jong-In</creator><creatorcontrib>Oh, Chan-Hyoung ; Shin, Dong-Soo ; Shim, Jong-In</creatorcontrib><description>In InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs), carrier accumulation in MQWs due to the saturation of the radiative recombination rate affects the internal-quantum-efficiency (IQE) and forward-voltage (VF) characteristics simultaneously. In this letter, we investigate the interrelation between the IQE and VF at an operating current density, using 31 blue LEDs with MQW active layers grown under slightly different conditions. The general trend observed demonstrates that VF decreases as the IQE increases. We analyze this interrelation between the IQE and VF through separation of radiative and nonradiative current densities, and propose to use the active efficiency (AE) to quantify the performance of the active layer more precisely. We examine the two cases where only the radiative (nonradiative) current density changes and establish that the increase of the radiative current density is more desirable than the decrease of the nonradiative current density in improving the AE of the device.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2019.2930756</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Current density ; Efficiency ; Electric potential ; forward voltage ; Gallium nitrides ; Internal quantum efficiency ; Light emitting diodes ; nonradiative current ; Organic light emitting diodes ; Performance evaluation ; Quantum efficiency ; Quantum well devices ; Quantum wells ; radiative current ; Radiative recombination ; Voltage</subject><ispartof>IEEE photonics technology letters, 2019-09, Vol.31 (17), p.1441-1444</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-c3a8199afff8f40472b5ccdac10d2773dbf1dee975c8920d19143b4fa49dcd5f3</citedby><cites>FETCH-LOGICAL-c291t-c3a8199afff8f40472b5ccdac10d2773dbf1dee975c8920d19143b4fa49dcd5f3</cites><orcidid>0000-0002-8810-0772 ; 0000-0002-0863-9138 ; 0000-0002-1305-074X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8771130$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8771130$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Oh, Chan-Hyoung</creatorcontrib><creatorcontrib>Shin, Dong-Soo</creatorcontrib><creatorcontrib>Shim, Jong-In</creatorcontrib><title>Interrelation Between the Internal Quantum Efficiency and Forward Voltage of Blue LEDs</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>In InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs), carrier accumulation in MQWs due to the saturation of the radiative recombination rate affects the internal-quantum-efficiency (IQE) and forward-voltage (VF) characteristics simultaneously. In this letter, we investigate the interrelation between the IQE and VF at an operating current density, using 31 blue LEDs with MQW active layers grown under slightly different conditions. The general trend observed demonstrates that VF decreases as the IQE increases. We analyze this interrelation between the IQE and VF through separation of radiative and nonradiative current densities, and propose to use the active efficiency (AE) to quantify the performance of the active layer more precisely. We examine the two cases where only the radiative (nonradiative) current density changes and establish that the increase of the radiative current density is more desirable than the decrease of the nonradiative current density in improving the AE of the device.</description><subject>Current density</subject><subject>Efficiency</subject><subject>Electric potential</subject><subject>forward voltage</subject><subject>Gallium nitrides</subject><subject>Internal quantum efficiency</subject><subject>Light emitting diodes</subject><subject>nonradiative current</subject><subject>Organic light emitting diodes</subject><subject>Performance evaluation</subject><subject>Quantum efficiency</subject><subject>Quantum well devices</subject><subject>Quantum wells</subject><subject>radiative current</subject><subject>Radiative recombination</subject><subject>Voltage</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kNFLwzAQh4MoOKfvgi8BnztzTWqaRzc3HRRUmHsNWXLRjq6dScvYf2_nhk_3g_t-x_ERcgtsBMDUQ_G-GKUM1ChVnMns8YwMQAlIGEhx3mfWZwCeXZKrGNeMgci4GJDlvG4xBKxMWzY1HWO7Q6xp-430b1Obin50pm67DZ16X9oSa7unpnZ01oSdCY4um6o1X0gbT8dVh7SYPsdrcuFNFfHmNIfkczZdTF6T4u1lPnkqEpsqaBPLTQ5KGe997gUTMl1l1jpjgblUSu5WHhyikpnNVcocKBB8JbwRylmXeT4k98e729D8dBhbvW66w9NRp6nMucoU5z3FjpQNTYwBvd6GcmPCXgPTB3u6t6cP9vTJXl-5O1ZKRPzHcyl7h4z_Akksa2k</recordid><startdate>20190901</startdate><enddate>20190901</enddate><creator>Oh, Chan-Hyoung</creator><creator>Shin, Dong-Soo</creator><creator>Shim, Jong-In</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-8810-0772</orcidid><orcidid>https://orcid.org/0000-0002-0863-9138</orcidid><orcidid>https://orcid.org/0000-0002-1305-074X</orcidid></search><sort><creationdate>20190901</creationdate><title>Interrelation Between the Internal Quantum Efficiency and Forward Voltage of Blue LEDs</title><author>Oh, Chan-Hyoung ; Shin, Dong-Soo ; Shim, Jong-In</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-c3a8199afff8f40472b5ccdac10d2773dbf1dee975c8920d19143b4fa49dcd5f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Current density</topic><topic>Efficiency</topic><topic>Electric potential</topic><topic>forward voltage</topic><topic>Gallium nitrides</topic><topic>Internal quantum efficiency</topic><topic>Light emitting diodes</topic><topic>nonradiative current</topic><topic>Organic light emitting diodes</topic><topic>Performance evaluation</topic><topic>Quantum efficiency</topic><topic>Quantum well devices</topic><topic>Quantum wells</topic><topic>radiative current</topic><topic>Radiative recombination</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Oh, Chan-Hyoung</creatorcontrib><creatorcontrib>Shin, Dong-Soo</creatorcontrib><creatorcontrib>Shim, Jong-In</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Oh, Chan-Hyoung</au><au>Shin, Dong-Soo</au><au>Shim, Jong-In</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Interrelation Between the Internal Quantum Efficiency and Forward Voltage of Blue LEDs</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2019-09-01</date><risdate>2019</risdate><volume>31</volume><issue>17</issue><spage>1441</spage><epage>1444</epage><pages>1441-1444</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>In InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs), carrier accumulation in MQWs due to the saturation of the radiative recombination rate affects the internal-quantum-efficiency (IQE) and forward-voltage (VF) characteristics simultaneously. In this letter, we investigate the interrelation between the IQE and VF at an operating current density, using 31 blue LEDs with MQW active layers grown under slightly different conditions. The general trend observed demonstrates that VF decreases as the IQE increases. We analyze this interrelation between the IQE and VF through separation of radiative and nonradiative current densities, and propose to use the active efficiency (AE) to quantify the performance of the active layer more precisely. We examine the two cases where only the radiative (nonradiative) current density changes and establish that the increase of the radiative current density is more desirable than the decrease of the nonradiative current density in improving the AE of the device.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LPT.2019.2930756</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-8810-0772</orcidid><orcidid>https://orcid.org/0000-0002-0863-9138</orcidid><orcidid>https://orcid.org/0000-0002-1305-074X</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1041-1135 |
| ispartof | IEEE photonics technology letters, 2019-09, Vol.31 (17), p.1441-1444 |
| issn | 1041-1135 1941-0174 |
| language | eng |
| recordid | cdi_proquest_journals_2278395933 |
| source | IEEE Electronic Library (IEL) |
| subjects | Current density Efficiency Electric potential forward voltage Gallium nitrides Internal quantum efficiency Light emitting diodes nonradiative current Organic light emitting diodes Performance evaluation Quantum efficiency Quantum well devices Quantum wells radiative current Radiative recombination Voltage |
| title | Interrelation Between the Internal Quantum Efficiency and Forward Voltage of Blue LEDs |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T11%3A15%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Interrelation%20Between%20the%20Internal%20Quantum%20Efficiency%20and%20Forward%20Voltage%20of%20Blue%20LEDs&rft.jtitle=IEEE%20photonics%20technology%20letters&rft.au=Oh,%20Chan-Hyoung&rft.date=2019-09-01&rft.volume=31&rft.issue=17&rft.spage=1441&rft.epage=1444&rft.pages=1441-1444&rft.issn=1041-1135&rft.eissn=1941-0174&rft.coden=IPTLEL&rft_id=info:doi/10.1109/LPT.2019.2930756&rft_dat=%3Cproquest_RIE%3E2278395933%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2278395933&rft_id=info:pmid/&rft_ieee_id=8771130&rfr_iscdi=true |