Room Temperature-Processed a-IGZO Schottky Diode for Rectifying Circuit and Bipolar 1D1R Crossbar Applications
In this paper, we demonstrate a tunable Schottky diode based on amorphous indium-gallium-zinc-oxide (a-IGZO) film with high performance for rectifying circuit and bipolar one diode-one resistor (1D1R) crossbar applications. By modulating the oxygen content in the a-IGZO film, the device shows adjust...
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| Veröffentlicht in: | IEEE transactions on electron devices 2019-09, Vol.66 (9), p.4087-4091 |
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| container_title | IEEE transactions on electron devices |
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| creator | Wu, Quantan Lu, Nianduan Geng, Di Wang, Hong Li, Ling Liu, Ming Yang, Guanhua Lu, Congyan Xu, Guangwei Wang, Jiawei Dang, Bingjie Gong, Yuxin Shi, Xuewen Chuai, Xichen |
| description | In this paper, we demonstrate a tunable Schottky diode based on amorphous indium-gallium-zinc-oxide (a-IGZO) film with high performance for rectifying circuit and bipolar one diode-one resistor (1D1R) crossbar applications. By modulating the oxygen content in the a-IGZO film, the device shows adjustable behavior. Under the high oxygen content condition, the device displays outstanding diode features with a large rectification ratio up to 10 8 at ±1 V and a high forward current density of 100 A/cm 2 at ±1 V when used Cu as the top electrode. The thermionic emission model is proposed to explain the Schottky diode behavior. And by utilizing the superior rectifying performance, we successfully demonstrate the dynamic rectifying application. In addition, we combine the optimized Schottky diode device with the bipolar-type resistive random access memory (RRAM) device to investigate the Schottky diode device in 1D1R crossbar application. As a result of its tunable nature and low processing temperature, the a-IGZO Schottky diode is a promising element for rectifying circuit and bipolar 1D1R crossbar applications. |
| doi_str_mv | 10.1109/TED.2019.2928792 |
| format | Article |
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By modulating the oxygen content in the a-IGZO film, the device shows adjustable behavior. Under the high oxygen content condition, the device displays outstanding diode features with a large rectification ratio up to 10 8 at ±1 V and a high forward current density of 100 A/cm 2 at ±1 V when used Cu as the top electrode. The thermionic emission model is proposed to explain the Schottky diode behavior. And by utilizing the superior rectifying performance, we successfully demonstrate the dynamic rectifying application. In addition, we combine the optimized Schottky diode device with the bipolar-type resistive random access memory (RRAM) device to investigate the Schottky diode device in 1D1R crossbar application. As a result of its tunable nature and low processing temperature, the a-IGZO Schottky diode is a promising element for rectifying circuit and bipolar 1D1R crossbar applications.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2019.2928792</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Amorphous indium–gallium–zinc–oxide (a-IGZO) ; Circuits ; Current density ; Diodes ; Electrons ; Indium gallium zinc oxide ; one diode one resistor (1D1R) ; Oxygen content ; Performance evaluation ; Random access memory ; Rectifying circuits ; resistive random access memory (RRAM) ; Room temperature ; Schottky diode ; Schottky diodes ; Sputtering ; Temperature measurement ; Thermionic emission</subject><ispartof>IEEE transactions on electron devices, 2019-09, Vol.66 (9), p.4087-4091</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c357t-430cecfb367dd51241f4bcf0f05fd16e5e317c03cc8cce6c027a1ceb37e18e6a3</citedby><cites>FETCH-LOGICAL-c357t-430cecfb367dd51241f4bcf0f05fd16e5e317c03cc8cce6c027a1ceb37e18e6a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8776653$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8776653$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Wu, Quantan</creatorcontrib><creatorcontrib>Lu, Nianduan</creatorcontrib><creatorcontrib>Geng, Di</creatorcontrib><creatorcontrib>Wang, Hong</creatorcontrib><creatorcontrib>Li, Ling</creatorcontrib><creatorcontrib>Liu, Ming</creatorcontrib><creatorcontrib>Yang, Guanhua</creatorcontrib><creatorcontrib>Lu, Congyan</creatorcontrib><creatorcontrib>Xu, Guangwei</creatorcontrib><creatorcontrib>Wang, Jiawei</creatorcontrib><creatorcontrib>Dang, Bingjie</creatorcontrib><creatorcontrib>Gong, Yuxin</creatorcontrib><creatorcontrib>Shi, Xuewen</creatorcontrib><creatorcontrib>Chuai, Xichen</creatorcontrib><title>Room Temperature-Processed a-IGZO Schottky Diode for Rectifying Circuit and Bipolar 1D1R Crossbar Applications</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>In this paper, we demonstrate a tunable Schottky diode based on amorphous indium-gallium-zinc-oxide (a-IGZO) film with high performance for rectifying circuit and bipolar one diode-one resistor (1D1R) crossbar applications. By modulating the oxygen content in the a-IGZO film, the device shows adjustable behavior. Under the high oxygen content condition, the device displays outstanding diode features with a large rectification ratio up to 10 8 at ±1 V and a high forward current density of 100 A/cm 2 at ±1 V when used Cu as the top electrode. The thermionic emission model is proposed to explain the Schottky diode behavior. And by utilizing the superior rectifying performance, we successfully demonstrate the dynamic rectifying application. In addition, we combine the optimized Schottky diode device with the bipolar-type resistive random access memory (RRAM) device to investigate the Schottky diode device in 1D1R crossbar application. As a result of its tunable nature and low processing temperature, the a-IGZO Schottky diode is a promising element for rectifying circuit and bipolar 1D1R crossbar applications.</description><subject>Amorphous indium–gallium–zinc–oxide (a-IGZO)</subject><subject>Circuits</subject><subject>Current density</subject><subject>Diodes</subject><subject>Electrons</subject><subject>Indium gallium zinc oxide</subject><subject>one diode one resistor (1D1R)</subject><subject>Oxygen content</subject><subject>Performance evaluation</subject><subject>Random access memory</subject><subject>Rectifying circuits</subject><subject>resistive random access memory (RRAM)</subject><subject>Room temperature</subject><subject>Schottky diode</subject><subject>Schottky diodes</subject><subject>Sputtering</subject><subject>Temperature measurement</subject><subject>Thermionic emission</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1PAjEQhhujiYjeTbw08bzYj91294iASEKCQbx42ZTZqRZhu7bLgX_vEoinyZs878zkIeSeswHnrHhaTcYDwXgxEIXIdSEuSI9nmU4KlapL0mOM50khc3lNbmLcdFGlqeiReun9jq5w12Aw7T5g8hY8YIxYUZPMpp8L-g7fvm1_DnTsfIXU-kCXCK2zB1d_0ZELsHctNXVFn13jtyZQPuZLOgo-xnWXhk2zdWBa5-t4S66s2Ua8O88--XiZrEavyXwxnY2G8wRkptsklQwQ7FoqXVUZFym36RossyyzFVeYoeQamATIAVABE9pwwLXUyHNURvbJ42lvE_zvHmNbbvw-1N3JUgidyyKTIu0odqLg-GtAWzbB7Uw4lJyVR6tlZ7U8Wi3PVrvKw6niEPEfz7VWKpPyDxrtdAk</recordid><startdate>20190901</startdate><enddate>20190901</enddate><creator>Wu, Quantan</creator><creator>Lu, Nianduan</creator><creator>Geng, Di</creator><creator>Wang, Hong</creator><creator>Li, Ling</creator><creator>Liu, Ming</creator><creator>Yang, Guanhua</creator><creator>Lu, Congyan</creator><creator>Xu, Guangwei</creator><creator>Wang, Jiawei</creator><creator>Dang, Bingjie</creator><creator>Gong, Yuxin</creator><creator>Shi, Xuewen</creator><creator>Chuai, Xichen</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20190901</creationdate><title>Room Temperature-Processed a-IGZO Schottky Diode for Rectifying Circuit and Bipolar 1D1R Crossbar Applications</title><author>Wu, Quantan ; Lu, Nianduan ; Geng, Di ; Wang, Hong ; Li, Ling ; Liu, Ming ; Yang, Guanhua ; Lu, Congyan ; Xu, Guangwei ; Wang, Jiawei ; Dang, Bingjie ; Gong, Yuxin ; Shi, Xuewen ; Chuai, Xichen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c357t-430cecfb367dd51241f4bcf0f05fd16e5e317c03cc8cce6c027a1ceb37e18e6a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Amorphous indium–gallium–zinc–oxide (a-IGZO)</topic><topic>Circuits</topic><topic>Current density</topic><topic>Diodes</topic><topic>Electrons</topic><topic>Indium gallium zinc oxide</topic><topic>one diode one resistor (1D1R)</topic><topic>Oxygen content</topic><topic>Performance evaluation</topic><topic>Random access memory</topic><topic>Rectifying circuits</topic><topic>resistive random access memory (RRAM)</topic><topic>Room temperature</topic><topic>Schottky diode</topic><topic>Schottky diodes</topic><topic>Sputtering</topic><topic>Temperature measurement</topic><topic>Thermionic emission</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wu, Quantan</creatorcontrib><creatorcontrib>Lu, Nianduan</creatorcontrib><creatorcontrib>Geng, Di</creatorcontrib><creatorcontrib>Wang, Hong</creatorcontrib><creatorcontrib>Li, Ling</creatorcontrib><creatorcontrib>Liu, Ming</creatorcontrib><creatorcontrib>Yang, Guanhua</creatorcontrib><creatorcontrib>Lu, Congyan</creatorcontrib><creatorcontrib>Xu, Guangwei</creatorcontrib><creatorcontrib>Wang, Jiawei</creatorcontrib><creatorcontrib>Dang, Bingjie</creatorcontrib><creatorcontrib>Gong, Yuxin</creatorcontrib><creatorcontrib>Shi, Xuewen</creatorcontrib><creatorcontrib>Chuai, Xichen</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wu, Quantan</au><au>Lu, Nianduan</au><au>Geng, Di</au><au>Wang, Hong</au><au>Li, Ling</au><au>Liu, Ming</au><au>Yang, Guanhua</au><au>Lu, Congyan</au><au>Xu, Guangwei</au><au>Wang, Jiawei</au><au>Dang, Bingjie</au><au>Gong, Yuxin</au><au>Shi, Xuewen</au><au>Chuai, Xichen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Room Temperature-Processed a-IGZO Schottky Diode for Rectifying Circuit and Bipolar 1D1R Crossbar Applications</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2019-09-01</date><risdate>2019</risdate><volume>66</volume><issue>9</issue><spage>4087</spage><epage>4091</epage><pages>4087-4091</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In this paper, we demonstrate a tunable Schottky diode based on amorphous indium-gallium-zinc-oxide (a-IGZO) film with high performance for rectifying circuit and bipolar one diode-one resistor (1D1R) crossbar applications. By modulating the oxygen content in the a-IGZO film, the device shows adjustable behavior. Under the high oxygen content condition, the device displays outstanding diode features with a large rectification ratio up to 10 8 at ±1 V and a high forward current density of 100 A/cm 2 at ±1 V when used Cu as the top electrode. The thermionic emission model is proposed to explain the Schottky diode behavior. And by utilizing the superior rectifying performance, we successfully demonstrate the dynamic rectifying application. In addition, we combine the optimized Schottky diode device with the bipolar-type resistive random access memory (RRAM) device to investigate the Schottky diode device in 1D1R crossbar application. As a result of its tunable nature and low processing temperature, the a-IGZO Schottky diode is a promising element for rectifying circuit and bipolar 1D1R crossbar applications.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2019.2928792</doi><tpages>5</tpages></addata></record> |
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| subjects | Amorphous indium–gallium–zinc–oxide (a-IGZO) Circuits Current density Diodes Electrons Indium gallium zinc oxide one diode one resistor (1D1R) Oxygen content Performance evaluation Random access memory Rectifying circuits resistive random access memory (RRAM) Room temperature Schottky diode Schottky diodes Sputtering Temperature measurement Thermionic emission |
| title | Room Temperature-Processed a-IGZO Schottky Diode for Rectifying Circuit and Bipolar 1D1R Crossbar Applications |
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