Direct Formation of Solution-based Al2O3 on Epitaxial Graphene Surface for Sensor Applications

We propose a method for fabricating high-performance epitaxial graphene field-effect transistors (EG-FETs), involving a microwave-annealing-treated solution-based Al2O3 (MWA-treated sol-Al2O3) layer as a gate dielectric. The MWA process substantially preserves the pristine properties of EG with mini...

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Veröffentlicht in:	Sensors and materials 2019-01, Vol.31 (7), p.2291
Hauptverfasser:	Kim, Kwan-Soo, Fukidome, Hirokazu, Suemitsu, Maki
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Dielectric properties Field effect transistors Graphene Leakage current Semiconductor devices Surface roughness Transconductance
Online-Zugang:	Volltext
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