Direct Formation of Solution-based Al2O3 on Epitaxial Graphene Surface for Sensor Applications
We propose a method for fabricating high-performance epitaxial graphene field-effect transistors (EG-FETs), involving a microwave-annealing-treated solution-based Al2O3 (MWA-treated sol-Al2O3) layer as a gate dielectric. The MWA process substantially preserves the pristine properties of EG with mini...
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| Veröffentlicht in: | Sensors and materials 2019-01, Vol.31 (7), p.2291 |
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| container_title | Sensors and materials |
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| creator | Kim, Kwan-Soo Fukidome, Hirokazu Suemitsu, Maki |
| description | We propose a method for fabricating high-performance epitaxial graphene field-effect transistors (EG-FETs), involving a microwave-annealing-treated solution-based Al2O3 (MWA-treated sol-Al2O3) layer as a gate dielectric. The MWA process substantially preserves the pristine properties of EG with minimal hole doping and strain induction. The MWA-treated sol-Al2O3 showed a surface roughness of ~0.33 nm, a dielectric constant of 7.5, and a leakage current of 8.7 × 10−6 A/cm2. The transconductance of the MWA-based EG-FET presents an enhanced field effect mobility by a factor of about 8 compared with the EG-FET with a natural oxide of Al. |
| doi_str_mv | 10.18494/SAM.2019.2317 |
| format | Article |
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The MWA process substantially preserves the pristine properties of EG with minimal hole doping and strain induction. The MWA-treated sol-Al2O3 showed a surface roughness of ~0.33 nm, a dielectric constant of 7.5, and a leakage current of 8.7 × 10−6 A/cm2. 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| source | DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Alma/SFX Local Collection |
| subjects | Aluminum oxide Dielectric properties Field effect transistors Graphene Leakage current Semiconductor devices Surface roughness Transconductance |
| title | Direct Formation of Solution-based Al2O3 on Epitaxial Graphene Surface for Sensor Applications |
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