Light effective hole mass in undoped Ge/SiGe quantum wells

We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities (2.0−11×1011cm−2) in top-gated field effect transistors by positioning the strained buried Ge channel at different depths of 12 and 44 nm from the surface....

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Veröffentlicht in:	Physical review. B 2019-07, Vol.100 (4), p.041304(R), Article 041304
Hauptverfasser:	Lodari, M., Tosato, A., Sabbagh, D., Schubert, M. A., Capellini, G., Sammak, A., Veldhorst, M., Scappucci, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Damping Density Dependence Field effect transistors Germanium Quantum dots Quantum wells Qubits (quantum computing) Semiconductor devices
Online-Zugang:	Volltext
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