Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications
A physics‐based analytical model for quaternary AlInGaN high electron mobility transistors (HEMTs) is developed including two‐dimensional electron gas (2DEG) and two‐dimensional hole gas (2DHG) for microwave applications. The DC and RF performance characteristics are explored by considering the quas...
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| Veröffentlicht in: | International journal of numerical modelling 2019-09, Vol.32 (5), p.n/a |
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| container_title | International journal of numerical modelling |
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| creator | Anbuselvan, N Mohankumar, N Mohanbabu, A |
| description | A physics‐based analytical model for quaternary AlInGaN high electron mobility transistors (HEMTs) is developed including two‐dimensional electron gas (2DEG) and two‐dimensional hole gas (2DHG) for microwave applications. The DC and RF performance characteristics are explored by considering the quasi‐triangular quantum well (QW). The derived charge carrier densities nsand psare considered for energy subbands Eo and E1 inside QW. The 2DEG sheet carrier concentration density remains constant as long as 2DHG exists. From the derived model, the drain current (Id), transconductance current gain (gm), and cutoff frequency (ft) for different gate length and width are verified with experimental data for upcoming nano‐scale devices. |
| doi_str_mv | 10.1002/jnm.2609 |
| format | Article |
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The DC and RF performance characteristics are explored by considering the quasi‐triangular quantum well (QW). The derived charge carrier densities nsand psare considered for energy subbands Eo and E1 inside QW. The 2DEG sheet carrier concentration density remains constant as long as 2DHG exists. From the derived model, the drain current (Id), transconductance current gain (gm), and cutoff frequency (ft) for different gate length and width are verified with experimental data for upcoming nano‐scale devices.</description><identifier>ISSN: 0894-3370</identifier><identifier>EISSN: 1099-1204</identifier><identifier>DOI: 10.1002/jnm.2609</identifier><language>eng</language><publisher>Bognor Regis: Wiley Subscription Services, Inc</publisher><subject>AlInGaN ; Carrier density ; Charge density ; Current carriers ; drain current Id ; Electron gas ; Electron mobility ; High electron mobility transistors ; Mathematical models ; Microwave frequencies ; quantum well (QW) ; Quantum wells ; Semiconductor devices ; Transconductance ; transconductance current gain gm and cutoff frequency ft ; two‐dimensional electron gas ns(2DEG) ; two‐dimensional hole gas ps(2DHG)</subject><ispartof>International journal of numerical modelling, 2019-09, Vol.32 (5), p.n/a</ispartof><rights>2019 John Wiley & Sons, Ltd.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2939-9e5c847f9ec7e064b02dd109c8ca504ef174f37387e90a3f69518fbb0b8d04573</citedby><cites>FETCH-LOGICAL-c2939-9e5c847f9ec7e064b02dd109c8ca504ef174f37387e90a3f69518fbb0b8d04573</cites><orcidid>0000-0001-6562-7881 ; 0000-0001-5017-9289</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fjnm.2609$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fjnm.2609$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27903,27904,45553,45554</link.rule.ids></links><search><creatorcontrib>Anbuselvan, N</creatorcontrib><creatorcontrib>Mohankumar, N</creatorcontrib><creatorcontrib>Mohanbabu, A</creatorcontrib><title>Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications</title><title>International journal of numerical modelling</title><description>A physics‐based analytical model for quaternary AlInGaN high electron mobility transistors (HEMTs) is developed including two‐dimensional electron gas (2DEG) and two‐dimensional hole gas (2DHG) for microwave applications. The DC and RF performance characteristics are explored by considering the quasi‐triangular quantum well (QW). The derived charge carrier densities nsand psare considered for energy subbands Eo and E1 inside QW. The 2DEG sheet carrier concentration density remains constant as long as 2DHG exists. From the derived model, the drain current (Id), transconductance current gain (gm), and cutoff frequency (ft) for different gate length and width are verified with experimental data for upcoming nano‐scale devices.</description><subject>AlInGaN</subject><subject>Carrier density</subject><subject>Charge density</subject><subject>Current carriers</subject><subject>drain current Id</subject><subject>Electron gas</subject><subject>Electron mobility</subject><subject>High electron mobility transistors</subject><subject>Mathematical models</subject><subject>Microwave frequencies</subject><subject>quantum well (QW)</subject><subject>Quantum wells</subject><subject>Semiconductor devices</subject><subject>Transconductance</subject><subject>transconductance current gain gm and cutoff frequency ft</subject><subject>two‐dimensional electron gas ns(2DEG)</subject><subject>two‐dimensional hole gas ps(2DHG)</subject><issn>0894-3370</issn><issn>1099-1204</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1kU1OIzEQhS3ESARmJI5giQ2bDmW7_7yMICSgwGwy65bjtoMjt7uxO0TNiiNwDa7FSXDIzHJWVSp9evWqHkLnBMYEgF5tXDOmOfAjNCLAeUIopMdoBCVPE8YKOEGnIWwAgJGMjtDHxAk79EYKi5u2Vta4NW41pjfTGd6Z_il28xnuWiu8eRW9aR2WT8KvFa6VC6YfcO2FicOt98r1WLgah0ZY-_n2Hsza_dPdiz5vRa-8E37AE3vnZuIRz6cPy4B163FjpG934kVh7dXzVjk5YNF1Nlrbbw0_0Q8tbFC__tYz9Od2uryeJ4vfs7vrySKRlDOecJXJMi00V7JQkKcroHUdPyFLKTJIlSZFqlnBykJxEEznPCOlXq1gVdaQZgU7QxcH3c630Uboq027jaZtqCgtGOQlybNIXR6oaDoEr3TVedPEyyoC1T6IKgZR7YOIaHJAd8aq4b9cdf_48M1_AcirjMs</recordid><startdate>201909</startdate><enddate>201909</enddate><creator>Anbuselvan, N</creator><creator>Mohankumar, N</creator><creator>Mohanbabu, A</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7TB</scope><scope>8FD</scope><scope>FR3</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><orcidid>https://orcid.org/0000-0001-6562-7881</orcidid><orcidid>https://orcid.org/0000-0001-5017-9289</orcidid></search><sort><creationdate>201909</creationdate><title>Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications</title><author>Anbuselvan, N ; Mohankumar, N ; Mohanbabu, A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2939-9e5c847f9ec7e064b02dd109c8ca504ef174f37387e90a3f69518fbb0b8d04573</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>AlInGaN</topic><topic>Carrier density</topic><topic>Charge density</topic><topic>Current carriers</topic><topic>drain current Id</topic><topic>Electron gas</topic><topic>Electron mobility</topic><topic>High electron mobility transistors</topic><topic>Mathematical models</topic><topic>Microwave frequencies</topic><topic>quantum well (QW)</topic><topic>Quantum wells</topic><topic>Semiconductor devices</topic><topic>Transconductance</topic><topic>transconductance current gain gm and cutoff frequency ft</topic><topic>two‐dimensional electron gas ns(2DEG)</topic><topic>two‐dimensional hole gas ps(2DHG)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Anbuselvan, N</creatorcontrib><creatorcontrib>Mohankumar, N</creatorcontrib><creatorcontrib>Mohanbabu, A</creatorcontrib><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>International journal of numerical modelling</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Anbuselvan, N</au><au>Mohankumar, N</au><au>Mohanbabu, A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications</atitle><jtitle>International journal of numerical modelling</jtitle><date>2019-09</date><risdate>2019</risdate><volume>32</volume><issue>5</issue><epage>n/a</epage><issn>0894-3370</issn><eissn>1099-1204</eissn><abstract>A physics‐based analytical model for quaternary AlInGaN high electron mobility transistors (HEMTs) is developed including two‐dimensional electron gas (2DEG) and two‐dimensional hole gas (2DHG) for microwave applications. The DC and RF performance characteristics are explored by considering the quasi‐triangular quantum well (QW). The derived charge carrier densities nsand psare considered for energy subbands Eo and E1 inside QW. The 2DEG sheet carrier concentration density remains constant as long as 2DHG exists. From the derived model, the drain current (Id), transconductance current gain (gm), and cutoff frequency (ft) for different gate length and width are verified with experimental data for upcoming nano‐scale devices.</abstract><cop>Bognor Regis</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/jnm.2609</doi><tpages>18</tpages><orcidid>https://orcid.org/0000-0001-6562-7881</orcidid><orcidid>https://orcid.org/0000-0001-5017-9289</orcidid></addata></record> |
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| ispartof | International journal of numerical modelling, 2019-09, Vol.32 (5), p.n/a |
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| language | eng |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | AlInGaN Carrier density Charge density Current carriers drain current Id Electron gas Electron mobility High electron mobility transistors Mathematical models Microwave frequencies quantum well (QW) Quantum wells Semiconductor devices Transconductance transconductance current gain gm and cutoff frequency ft two‐dimensional electron gas ns(2DEG) two‐dimensional hole gas ps(2DHG) |
| title | Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications |
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