Interface moment dynamics and its contribution to spin-transfer torque switching process in magnetic tunnel junctions

A practical problem for memory applications involving perpendicularly magnetized magnetic tunnel junctions is the reliability of switching characteristics at high-bias voltage. Often it has been observed that at high bias, additional error processes are present that cause a decrease in switching pro...

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Veröffentlicht in:	Physical review. B 2019-07, Vol.100 (1), p.014435, Article 014435
Hauptverfasser:	Safranski, Christopher, Sun, Jonathan Z.
Format:	Artikel
Sprache:	eng
Schlagworte:	Anisotropy Bias Electric potential Errors Magnetic moments Microwave emission Numerical models Spin dynamics Switching Tunnel junctions Voltage
Online-Zugang:	Volltext
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