Surface improvement investigation of sol-gel SiO2 cladding for waveguide device passivation

The sol-gel method is a well-known process for SiO2 formation on top of a semiconductor-based waveguide. This method does not require expensive equipment or SiH4 gas. However, it may result in difficulty with wet-etching, which prevents proper current injection into the semiconductor layer. We have...

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Veröffentlicht in:Japanese Journal of Applied Physics 2019-08, Vol.58 (SJ), p.SJJB04
Hauptverfasser: Ogawa, Satoshi, Idris, Ahmad Syahrin, Han, Yu, Jiang, Haisong, Hamamoto, Kiichi
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Sprache:eng
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