Surface improvement investigation of sol-gel SiO2 cladding for waveguide device passivation

The sol-gel method is a well-known process for SiO2 formation on top of a semiconductor-based waveguide. This method does not require expensive equipment or SiH4 gas. However, it may result in difficulty with wet-etching, which prevents proper current injection into the semiconductor layer. We have...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2019-08, Vol.58 (SJ), p.SJJB04
Hauptverfasser:	Ogawa, Satoshi, Idris, Ahmad Syahrin, Han, Yu, Jiang, Haisong, Hamamoto, Kiichi
Format:	Artikel
Sprache:	eng
Schlagworte:	Curing Current injection Etching Silicon dioxide Sol-gel processes
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container_title	Japanese Journal of Applied Physics
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creator	Ogawa, Satoshi Idris, Ahmad Syahrin Han, Yu Jiang, Haisong Hamamoto, Kiichi
description	The sol-gel method is a well-known process for SiO2 formation on top of a semiconductor-based waveguide. This method does not require expensive equipment or SiH4 gas. However, it may result in difficulty with wet-etching, which prevents proper current injection into the semiconductor layer. We have investigated the surface condition of sol-gel SiO2 on top of Si, and have confirmed that the main causes of the anti-etching property might be due to the formation of a polymer layer after the curing process. To improve the surface condition, plasma ashing, in addition to 700 °C curing, is proposed. Regular wet etching of SiO2 layer on Si with a ratio of 1800 nm min−1 has been successfully confirmed.
doi_str_mv	10.7567/1347-4065/ab27b2
format	Article
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This method does not require expensive equipment or SiH4 gas. However, it may result in difficulty with wet-etching, which prevents proper current injection into the semiconductor layer. We have investigated the surface condition of sol-gel SiO2 on top of Si, and have confirmed that the main causes of the anti-etching property might be due to the formation of a polymer layer after the curing process. To improve the surface condition, plasma ashing, in addition to 700 °C curing, is proposed. 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subjects	Curing Current injection Etching Silicon dioxide Sol-gel processes
title	Surface improvement investigation of sol-gel SiO2 cladding for waveguide device passivation
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