A Computational Study of a Heterostructure Tunneling Carbon Nanotube Field-Effect Transistor

In this paper a heterostructure tunneling carbon nanotube field-effect transistor, namely H-T-CNTFET, is introduced. In the proposed structure, a carbon nanotube with a different chirality is used for the drain side compared to the source and the channel region. Characteristics of the proposed struc...

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Veröffentlicht in:	Journal of electronic materials 2019-11, Vol.48 (11), p.7048-7054
Hauptverfasser:	Tahaei, Seyyedeh Hoda, Ghoreishi, Seyed Saleh, Yousefi, Reza, Aderang, Habib
Format:	Artikel
Sprache:	eng
Schlagworte:	Carbon Carbon nanotubes Characterization and Evaluation of Materials Chemistry and Materials Science Chirality Computer simulation Electronics and Microelectronics Field effect transistors Heterostructures Instrumentation Materials Science Optical and Electronic Materials Semiconductor devices Solid State Physics Transconductance Transistors
Online-Zugang:	Volltext
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