Raman Spectroscopy of Substrate Effects on Single- and Twisted-bilayer Graphene
Investigation of substrate effects of twisted-bilayer graphene is critical for the fundamental understanding and the potential applications of tBLG. We obtained high-quality graphene and tBLG by chemical vapor deposition. Si3N4 has been shown to be the best deposit substrate for graphene transistor...
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| Veröffentlicht in: | Chemistry letters 2019-08, Vol.48 (8), p.870-873 |
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| container_end_page | 873 |
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| container_issue | 8 |
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| container_title | Chemistry letters |
| container_volume | 48 |
| creator | Liu, Yonghao Wang, Yuling Ren, Yandong |
| description | Investigation of substrate effects of twisted-bilayer graphene is critical for the fundamental understanding and the potential applications of tBLG. We obtained high-quality graphene and tBLG by chemical vapor deposition. Si3N4 has been shown to be the best deposit substrate for graphene transistor application. Graphene on Si3N4 tends to have smaller compressive strain than graphene on SiO2, while annealing at 400 °C in ultra-high vacuum results in similar compressive strain and reduced electron doping due to polymer removal. |
| doi_str_mv | 10.1246/cl.190237 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2271907676</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2271907676</sourcerecordid><originalsourceid>FETCH-LOGICAL-c374t-52916305f23c33440106e59b49706f02ef3077bca85a7f0cde9cfd2eee2178713</originalsourceid><addsrcrecordid>eNplkEFLwzAUx4MoOKcHv0HAk4fOl6RN2qOMOYXBwM1zSdMX19G1NcmQfnsjG3jw9A7v9_893p-QewYzxlP5ZNoZK4ALdUEmTKR5Aopll2QCQspEAefX5Mb7PQDkheATsn7XB93RzYAmuN6bfhhpb-nmWPngdEC6sDauPO0j1HSfLSZUdzXdfjc-YJ1UTatHdHTp9LDDDm_JldWtx7vznJKPl8V2_pqs1su3-fMqMUKlIcl4waSAzHJhhEhTYCAxK6q0UCAtcLQClKqMzjOtLJgaC2NrjoicqVwxMSUPJ-_g-q8j-lDu-6Pr4smScxUrUFLJSD2eKBN_8w5tObjmoN1YMih_-ypNW576iqw8szs8NCaaetNgGPd60N2f_X_wB9a0bt4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2271907676</pqid></control><display><type>article</type><title>Raman Spectroscopy of Substrate Effects on Single- and Twisted-bilayer Graphene</title><source>Oxford Journals - Connect here FIRST to enable access</source><creator>Liu, Yonghao ; Wang, Yuling ; Ren, Yandong</creator><creatorcontrib>Liu, Yonghao ; Wang, Yuling ; Ren, Yandong</creatorcontrib><description>Investigation of substrate effects of twisted-bilayer graphene is critical for the fundamental understanding and the potential applications of tBLG. We obtained high-quality graphene and tBLG by chemical vapor deposition. Si3N4 has been shown to be the best deposit substrate for graphene transistor application. Graphene on Si3N4 tends to have smaller compressive strain than graphene on SiO2, while annealing at 400 °C in ultra-high vacuum results in similar compressive strain and reduced electron doping due to polymer removal.</description><identifier>ISSN: 0366-7022</identifier><identifier>EISSN: 1348-0715</identifier><identifier>DOI: 10.1246/cl.190237</identifier><language>eng ; jpn</language><publisher>Tokyo: The Chemical Society of Japan</publisher><subject>Bilayers ; Chemical vapor deposition ; Compressive properties ; Graphene ; High vacuum ; Organic chemistry ; Raman spectroscopy ; Silicon dioxide ; Silicon nitride ; Substrates</subject><ispartof>Chemistry letters, 2019-08, Vol.48 (8), p.870-873</ispartof><rights>The Chemical Society of Japan</rights><rights>Copyright Chemical Society of Japan 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c374t-52916305f23c33440106e59b49706f02ef3077bca85a7f0cde9cfd2eee2178713</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Liu, Yonghao</creatorcontrib><creatorcontrib>Wang, Yuling</creatorcontrib><creatorcontrib>Ren, Yandong</creatorcontrib><title>Raman Spectroscopy of Substrate Effects on Single- and Twisted-bilayer Graphene</title><title>Chemistry letters</title><description>Investigation of substrate effects of twisted-bilayer graphene is critical for the fundamental understanding and the potential applications of tBLG. We obtained high-quality graphene and tBLG by chemical vapor deposition. Si3N4 has been shown to be the best deposit substrate for graphene transistor application. Graphene on Si3N4 tends to have smaller compressive strain than graphene on SiO2, while annealing at 400 °C in ultra-high vacuum results in similar compressive strain and reduced electron doping due to polymer removal.</description><subject>Bilayers</subject><subject>Chemical vapor deposition</subject><subject>Compressive properties</subject><subject>Graphene</subject><subject>High vacuum</subject><subject>Organic chemistry</subject><subject>Raman spectroscopy</subject><subject>Silicon dioxide</subject><subject>Silicon nitride</subject><subject>Substrates</subject><issn>0366-7022</issn><issn>1348-0715</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNplkEFLwzAUx4MoOKcHv0HAk4fOl6RN2qOMOYXBwM1zSdMX19G1NcmQfnsjG3jw9A7v9_893p-QewYzxlP5ZNoZK4ALdUEmTKR5Aopll2QCQspEAefX5Mb7PQDkheATsn7XB93RzYAmuN6bfhhpb-nmWPngdEC6sDauPO0j1HSfLSZUdzXdfjc-YJ1UTatHdHTp9LDDDm_JldWtx7vznJKPl8V2_pqs1su3-fMqMUKlIcl4waSAzHJhhEhTYCAxK6q0UCAtcLQClKqMzjOtLJgaC2NrjoicqVwxMSUPJ-_g-q8j-lDu-6Pr4smScxUrUFLJSD2eKBN_8w5tObjmoN1YMih_-ypNW576iqw8szs8NCaaetNgGPd60N2f_X_wB9a0bt4</recordid><startdate>20190805</startdate><enddate>20190805</enddate><creator>Liu, Yonghao</creator><creator>Wang, Yuling</creator><creator>Ren, Yandong</creator><general>The Chemical Society of Japan</general><general>Chemical Society of Japan</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20190805</creationdate><title>Raman Spectroscopy of Substrate Effects on Single- and Twisted-bilayer Graphene</title><author>Liu, Yonghao ; Wang, Yuling ; Ren, Yandong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c374t-52916305f23c33440106e59b49706f02ef3077bca85a7f0cde9cfd2eee2178713</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng ; jpn</language><creationdate>2019</creationdate><topic>Bilayers</topic><topic>Chemical vapor deposition</topic><topic>Compressive properties</topic><topic>Graphene</topic><topic>High vacuum</topic><topic>Organic chemistry</topic><topic>Raman spectroscopy</topic><topic>Silicon dioxide</topic><topic>Silicon nitride</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Yonghao</creatorcontrib><creatorcontrib>Wang, Yuling</creatorcontrib><creatorcontrib>Ren, Yandong</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Chemistry letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Yonghao</au><au>Wang, Yuling</au><au>Ren, Yandong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Raman Spectroscopy of Substrate Effects on Single- and Twisted-bilayer Graphene</atitle><jtitle>Chemistry letters</jtitle><date>2019-08-05</date><risdate>2019</risdate><volume>48</volume><issue>8</issue><spage>870</spage><epage>873</epage><pages>870-873</pages><issn>0366-7022</issn><eissn>1348-0715</eissn><abstract>Investigation of substrate effects of twisted-bilayer graphene is critical for the fundamental understanding and the potential applications of tBLG. We obtained high-quality graphene and tBLG by chemical vapor deposition. Si3N4 has been shown to be the best deposit substrate for graphene transistor application. Graphene on Si3N4 tends to have smaller compressive strain than graphene on SiO2, while annealing at 400 °C in ultra-high vacuum results in similar compressive strain and reduced electron doping due to polymer removal.</abstract><cop>Tokyo</cop><pub>The Chemical Society of Japan</pub><doi>10.1246/cl.190237</doi><tpages>4</tpages></addata></record> |
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| ispartof | Chemistry letters, 2019-08, Vol.48 (8), p.870-873 |
| issn | 0366-7022 1348-0715 |
| language | eng ; jpn |
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| source | Oxford Journals - Connect here FIRST to enable access |
| subjects | Bilayers Chemical vapor deposition Compressive properties Graphene High vacuum Organic chemistry Raman spectroscopy Silicon dioxide Silicon nitride Substrates |
| title | Raman Spectroscopy of Substrate Effects on Single- and Twisted-bilayer Graphene |
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