Morphological and electrical characterizations of dip coated porous TiO2 thin films with different concentrations of thiourea additives for resistive switching applications
Dip coating process was used as a synthesis technique for the fabrication of porous TiO 2 thin films, where titanium (IV) n-butoxide precursor was used along with Pluronic F-127 and thiourea additives. In this research, thiourea to precursor molar ratio was varied from 0 to 10%, whereas the concentr...
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Veröffentlicht in: | Journal of materials science. Materials in electronics 2019-09, Vol.30 (17), p.15928-15934 |
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Sprache: | eng |
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