Morphological and electrical characterizations of dip coated porous TiO2 thin films with different concentrations of thiourea additives for resistive switching applications

Dip coating process was used as a synthesis technique for the fabrication of porous TiO 2 thin films, where titanium (IV) n-butoxide precursor was used along with Pluronic F-127 and thiourea additives. In this research, thiourea to precursor molar ratio was varied from 0 to 10%, whereas the concentr...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of materials science. Materials in electronics 2019-09, Vol.30 (17), p.15928-15934
Hauptverfasser: Roy, S., Tripathy, N., Sahu, P. K., Kar, J. P.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!