Validation of a 3D mathematical model for feed rod melting during floating zone Si crystal growth
•The shape of the open melting front in FZ growth was calculated with a 3D model.•Inductor current supplies create a local shape asymmetry of 0.6 mm.•Numerical results were confirmed by in situ and ex-situ shape measurements. A mathematical model of global 3D heat transfer in floating zone silicon s...
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| Veröffentlicht in: | Journal of crystal growth 2019-09, Vol.521, p.46-49 |
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| container_title | Journal of crystal growth |
| container_volume | 521 |
| creator | Plāte, Matīss Dadzis, Kaspars Krauze, Armands Menzel, Robert Virbulis, Jānis |
| description | •The shape of the open melting front in FZ growth was calculated with a 3D model.•Inductor current supplies create a local shape asymmetry of 0.6 mm.•Numerical results were confirmed by in situ and ex-situ shape measurements.
A mathematical model of global 3D heat transfer in floating zone silicon single crystal growth process is used to predict the shape of the open melting front of the feed rod. The model is validated using measurement data from research-scale growth experiments. Shape profiles of the open melting front are obtained from the feed rod leftover using a movable dial gauge. Azimuthal asymmetry of the rim of the open melting front is revealed in both simulations and measurements, quantitatively indicating the influence of the main slit of the inductor. |
| doi_str_mv | 10.1016/j.jcrysgro.2019.05.034 |
| format | Article |
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A mathematical model of global 3D heat transfer in floating zone silicon single crystal growth process is used to predict the shape of the open melting front of the feed rod. The model is validated using measurement data from research-scale growth experiments. Shape profiles of the open melting front are obtained from the feed rod leftover using a movable dial gauge. Azimuthal asymmetry of the rim of the open melting front is revealed in both simulations and measurements, quantitatively indicating the influence of the main slit of the inductor.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2019.05.034</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Computer simulation ; A1. Heat transfer ; A2. Floating zone technique ; A2. Single crystal growth ; B2. Semiconducting silicon ; Computer simulation ; Crystal growth ; Crystals ; Mathematical analysis ; Mathematical models ; Melting ; Silicon ; Single crystals ; Three dimensional models</subject><ispartof>Journal of crystal growth, 2019-09, Vol.521, p.46-49</ispartof><rights>2019 Elsevier B.V.</rights><rights>Copyright Elsevier BV Sep 1, 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c340t-9062b6ffc40b7502aafb8884310211ac82cba15070c3870a7d9311e374f348e33</citedby><cites>FETCH-LOGICAL-c340t-9062b6ffc40b7502aafb8884310211ac82cba15070c3870a7d9311e374f348e33</cites><orcidid>0000-0002-8109-6619</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2019.05.034$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Plāte, Matīss</creatorcontrib><creatorcontrib>Dadzis, Kaspars</creatorcontrib><creatorcontrib>Krauze, Armands</creatorcontrib><creatorcontrib>Menzel, Robert</creatorcontrib><creatorcontrib>Virbulis, Jānis</creatorcontrib><title>Validation of a 3D mathematical model for feed rod melting during floating zone Si crystal growth</title><title>Journal of crystal growth</title><description>•The shape of the open melting front in FZ growth was calculated with a 3D model.•Inductor current supplies create a local shape asymmetry of 0.6 mm.•Numerical results were confirmed by in situ and ex-situ shape measurements.
A mathematical model of global 3D heat transfer in floating zone silicon single crystal growth process is used to predict the shape of the open melting front of the feed rod. The model is validated using measurement data from research-scale growth experiments. Shape profiles of the open melting front are obtained from the feed rod leftover using a movable dial gauge. Azimuthal asymmetry of the rim of the open melting front is revealed in both simulations and measurements, quantitatively indicating the influence of the main slit of the inductor.</description><subject>A1. Computer simulation</subject><subject>A1. Heat transfer</subject><subject>A2. Floating zone technique</subject><subject>A2. Single crystal growth</subject><subject>B2. Semiconducting silicon</subject><subject>Computer simulation</subject><subject>Crystal growth</subject><subject>Crystals</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>Melting</subject><subject>Silicon</subject><subject>Single crystals</subject><subject>Three dimensional models</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqFUMtOwzAQtBBIlMIvIEucE9Z2Hs4NVJ5SJQ48rpbj2K2jJC52Cipfj0PhzGVHK83Mzg5C5wRSAqS4bNNW-V1YeZdSIFUKeQosO0AzwkuW5AD0EM3ipAnQjB-jkxBagKgkMEPyTXa2kaN1A3YGS8xucC_HtY7DKtnh3jW6w8Z5bLRusHcN7nU32mGFm62fwHRO_uxfbtD42eIpzRilMdHnuD5FR0Z2QZ_94hy93t2-LB6S5dP94-J6mSiWwZhUUNC6MEZlUJc5UClNzTnPGAFKiFScqlqSHEpQjJcgy6ZihGhWZoZlXDM2Rxd7341371sdRtG6rR_iSUFpUVU5h6KKrGLPUt6F4LURG2976XeCgJjqFK34q1NMdQrIRawzCq_2Qh1_-LDai6CsHpRurNdqFI2z_1l8A8V9gU4</recordid><startdate>20190901</startdate><enddate>20190901</enddate><creator>Plāte, Matīss</creator><creator>Dadzis, Kaspars</creator><creator>Krauze, Armands</creator><creator>Menzel, Robert</creator><creator>Virbulis, Jānis</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-8109-6619</orcidid></search><sort><creationdate>20190901</creationdate><title>Validation of a 3D mathematical model for feed rod melting during floating zone Si crystal growth</title><author>Plāte, Matīss ; Dadzis, Kaspars ; Krauze, Armands ; Menzel, Robert ; Virbulis, Jānis</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c340t-9062b6ffc40b7502aafb8884310211ac82cba15070c3870a7d9311e374f348e33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>A1. Computer simulation</topic><topic>A1. Heat transfer</topic><topic>A2. Floating zone technique</topic><topic>A2. Single crystal growth</topic><topic>B2. Semiconducting silicon</topic><topic>Computer simulation</topic><topic>Crystal growth</topic><topic>Crystals</topic><topic>Mathematical analysis</topic><topic>Mathematical models</topic><topic>Melting</topic><topic>Silicon</topic><topic>Single crystals</topic><topic>Three dimensional models</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Plāte, Matīss</creatorcontrib><creatorcontrib>Dadzis, Kaspars</creatorcontrib><creatorcontrib>Krauze, Armands</creatorcontrib><creatorcontrib>Menzel, Robert</creatorcontrib><creatorcontrib>Virbulis, Jānis</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Plāte, Matīss</au><au>Dadzis, Kaspars</au><au>Krauze, Armands</au><au>Menzel, Robert</au><au>Virbulis, Jānis</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Validation of a 3D mathematical model for feed rod melting during floating zone Si crystal growth</atitle><jtitle>Journal of crystal growth</jtitle><date>2019-09-01</date><risdate>2019</risdate><volume>521</volume><spage>46</spage><epage>49</epage><pages>46-49</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><abstract>•The shape of the open melting front in FZ growth was calculated with a 3D model.•Inductor current supplies create a local shape asymmetry of 0.6 mm.•Numerical results were confirmed by in situ and ex-situ shape measurements.
A mathematical model of global 3D heat transfer in floating zone silicon single crystal growth process is used to predict the shape of the open melting front of the feed rod. The model is validated using measurement data from research-scale growth experiments. Shape profiles of the open melting front are obtained from the feed rod leftover using a movable dial gauge. Azimuthal asymmetry of the rim of the open melting front is revealed in both simulations and measurements, quantitatively indicating the influence of the main slit of the inductor.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2019.05.034</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-8109-6619</orcidid></addata></record> |
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| ispartof | Journal of crystal growth, 2019-09, Vol.521, p.46-49 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | A1. Computer simulation A1. Heat transfer A2. Floating zone technique A2. Single crystal growth B2. Semiconducting silicon Computer simulation Crystal growth Crystals Mathematical analysis Mathematical models Melting Silicon Single crystals Three dimensional models |
| title | Validation of a 3D mathematical model for feed rod melting during floating zone Si crystal growth |
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