An Improved Proportional Base Driver for Minimizing Driver Power Consumption of SiC BJT Over Wide Current and Temperature Range

SiC bipolar junction transistor (BJT) still offers an attractive alternative to the more popular SiC MOSFET because of its several advantages, such as low fabrication cost, fast switching speed, and high temperature durability. However, it has not been widely accepted in the market partially because...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE journal of emerging and selected topics in power electronics 2019-09, Vol.7 (3), p.1727-1735
Hauptverfasser:	Liang, Shiwei, Wang, Jun, Deng, Linfeng, Shi, Yize, Yin, Xin, Shen, Z. John
Format:	Artikel
Sprache:	eng
Schlagworte:	4H-SiC bipolar junction transistor (BJT) Bipolar transistors boost converter Circuits Current sources Driver circuits driver loss gate driver High temperature Junctions MOSFET MOSFETs Power consumption Power converters Power demand Resistors Silicon carbide Steady-state Switches Temperature
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!