Influence of Surface Passivation on Indium Arsenide Nanowire Band Gap Energies

The interplay between surface chemistry and quantum confinement on the band gap energies of indium arsenide (InAs) nanowires is investigated by first principle computations as the surface-to-volume ratio increases with decreasing cross section. Electronic band structures are presented as determined...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of electronic materials 2019-10, Vol.48 (10), p.6654-6660
Hauptverfasser:	Razavi, Pedram, Greer, James C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Approximation Arsenides Characterization and Evaluation of Materials Chemistry and Materials Science Density functional theory Electron affinity Electronics and Microelectronics Energy gap Field effect transistors First principles Indium arsenides Instrumentation Intermetallic compounds Materials Science Nanowires Optical and Electronic Materials Organic chemistry Quantum confinement Semiconductor devices Solid State Physics Surface chemistry
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!