Wavelength-tunable InAsP quantum dots in InP nanowires

There is considerable interest in quantum dots incorporated in nanowires for nanolasers and quantum emitters. In this letter, we demonstrate single InAsP quantum dots embedded in InP nanowires grown by metalorganic vapor-phase epitaxy. Despite the abrupt change of growth conditions at the interface,...

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Veröffentlicht in:	Applied physics letters 2019-07, Vol.115 (5)
Hauptverfasser:	Zhong, Zhiqin, Li, Xinlei, Wu, Jiang, Li, Cheng, Xie, Ruo Bing, Yuan, Xiaoming, Niu, Xiaobin, Wang, Wenhao, Luo, Xiaorong, Zhang, Guojun, Wang, Zhiming M., Tan, Hark Hoe, Jagadish, Chennupati
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Dislocations Electrons Emitters Epitaxial growth Metalorganic chemical vapor deposition Nanowires Optoelectronics Photoluminescence Quantum dots Wurtzite
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