Temperature Driven Unusual Reversible p‐ to n‐Type Conduction Switching in Bi2Te2.7Se0.3
Bismuth telluride based alloys are electronic semiconductors, which exhibit n‐ or p‐type conduction due to the formation of Te vacancies or antisite defects, i.e., substitution of Bi on Te site or vice versa. Here, it is demonstrated that the temperature dependent Seebeck coefficient of Bi2Te2.7Se0....
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| Veröffentlicht in: | Physica status solidi. PSS-RRL. Rapid research letters 2019-07, Vol.13 (7), p.n/a |
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| creator | Bohra, Anil K. Ahmad, Sajid Bhatt, Ranu Singh, Ajay Bhattacharya, Shovit Basu, Ranita Sarkar, Pritam Meshram, Kailash N. Debnath, Anil K. Bhatt, Pramod Sarkar, Shaibal K. Patro, P. K. Dasgupta, Kinshuk Muthe, Kunal P. Aswal, Dinesh K. |
| description | Bismuth telluride based alloys are electronic semiconductors, which exhibit n‐ or p‐type conduction due to the formation of Te vacancies or antisite defects, i.e., substitution of Bi on Te site or vice versa. Here, it is demonstrated that the temperature dependent Seebeck coefficient of Bi2Te2.7Se0.3 exhibits a reversible change in conduction from p‐ to n‐type at temperatures >487 K without exhibiting any structural transformation. The detailed characterization revealed that conversion of BiTe/Se antisite defects into Te vacancies is responsible for the p–n transition. The observed p–n transition makes Bi2Te2.7Se0.3 an ideal candidate for temperature controlled electronic switches.
Bismuth telluride based alloys usually exhibit n‐ or p‐type conduction due to Te vacancies or due to the formation of Bi vacancies or anitisite defects, i.e., Bi substitution on Te sites or vice versa. The temperature dependent Seebeck coefficient of Bi2Te2.7Se0.3 exhibits a reversible change in conduction from p‐ to n‐type at temperatures >487 K without exhibiting any structural transformation. The conversion of BiTe/Se antisite defects into Te vacancies is responsible for p to n transition of Bi2Te2.7Se0.3. |
| doi_str_mv | 10.1002/pssr.201900121 |
| format | Article |
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Bismuth telluride based alloys usually exhibit n‐ or p‐type conduction due to Te vacancies or due to the formation of Bi vacancies or anitisite defects, i.e., Bi substitution on Te sites or vice versa. The temperature dependent Seebeck coefficient of Bi2Te2.7Se0.3 exhibits a reversible change in conduction from p‐ to n‐type at temperatures >487 K without exhibiting any structural transformation. The conversion of BiTe/Se antisite defects into Te vacancies is responsible for p to n transition of Bi2Te2.7Se0.3.</description><identifier>ISSN: 1862-6254</identifier><identifier>EISSN: 1862-6270</identifier><identifier>DOI: 10.1002/pssr.201900121</identifier><language>eng</language><publisher>Berlin: WILEY‐VCH Verlag Berlin GmbH</publisher><subject>Antisite defects ; bismuth telluride ; Bismuth tellurides ; chalcogenide compounds ; conduction switching ; reversible semiconductor switches ; Seebeck effect ; Structural analysis ; Switches ; Tellurium ; Temperature ; Temperature dependence ; Vacancies</subject><ispartof>Physica status solidi. PSS-RRL. Rapid research letters, 2019-07, Vol.13 (7), p.n/a</ispartof><rights>2019 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0003-1298-4230</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssr.201900121$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssr.201900121$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>315,782,786,1419,27931,27932,45581,45582</link.rule.ids></links><search><creatorcontrib>Bohra, Anil K.</creatorcontrib><creatorcontrib>Ahmad, Sajid</creatorcontrib><creatorcontrib>Bhatt, Ranu</creatorcontrib><creatorcontrib>Singh, Ajay</creatorcontrib><creatorcontrib>Bhattacharya, Shovit</creatorcontrib><creatorcontrib>Basu, Ranita</creatorcontrib><creatorcontrib>Sarkar, Pritam</creatorcontrib><creatorcontrib>Meshram, Kailash N.</creatorcontrib><creatorcontrib>Debnath, Anil K.</creatorcontrib><creatorcontrib>Bhatt, Pramod</creatorcontrib><creatorcontrib>Sarkar, Shaibal K.</creatorcontrib><creatorcontrib>Patro, P. K.</creatorcontrib><creatorcontrib>Dasgupta, Kinshuk</creatorcontrib><creatorcontrib>Muthe, Kunal P.</creatorcontrib><creatorcontrib>Aswal, Dinesh K.</creatorcontrib><title>Temperature Driven Unusual Reversible p‐ to n‐Type Conduction Switching in Bi2Te2.7Se0.3</title><title>Physica status solidi. PSS-RRL. Rapid research letters</title><description>Bismuth telluride based alloys are electronic semiconductors, which exhibit n‐ or p‐type conduction due to the formation of Te vacancies or antisite defects, i.e., substitution of Bi on Te site or vice versa. Here, it is demonstrated that the temperature dependent Seebeck coefficient of Bi2Te2.7Se0.3 exhibits a reversible change in conduction from p‐ to n‐type at temperatures >487 K without exhibiting any structural transformation. The detailed characterization revealed that conversion of BiTe/Se antisite defects into Te vacancies is responsible for the p–n transition. The observed p–n transition makes Bi2Te2.7Se0.3 an ideal candidate for temperature controlled electronic switches.
Bismuth telluride based alloys usually exhibit n‐ or p‐type conduction due to Te vacancies or due to the formation of Bi vacancies or anitisite defects, i.e., Bi substitution on Te sites or vice versa. The temperature dependent Seebeck coefficient of Bi2Te2.7Se0.3 exhibits a reversible change in conduction from p‐ to n‐type at temperatures >487 K without exhibiting any structural transformation. The conversion of BiTe/Se antisite defects into Te vacancies is responsible for p to n transition of Bi2Te2.7Se0.3.</description><subject>Antisite defects</subject><subject>bismuth telluride</subject><subject>Bismuth tellurides</subject><subject>chalcogenide compounds</subject><subject>conduction switching</subject><subject>reversible semiconductor switches</subject><subject>Seebeck effect</subject><subject>Structural analysis</subject><subject>Switches</subject><subject>Tellurium</subject><subject>Temperature</subject><subject>Temperature dependence</subject><subject>Vacancies</subject><issn>1862-6254</issn><issn>1862-6270</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNo9kM1Kw0AUhQdRsFa3rgdcJ975yc8stVoVCkqT7oQhnUx0SjqJM0lLdz6Cz-iTmFLp6twDH_fAh9A1gZAA0NvWexdSIAKAUHKCRiSNaRDTBE6Pd8TP0YX3K4BIJJyN0Huu1612Rdc7jR-c2WiLF7b3fVHjud5o582y1rj9_f7BXYPtkPmu1XjS2LJXnWkszramU5_GfmBj8b2huaZhkmkI2SU6q4ra66v_HKPF9DGfPAez16eXyd0saCljJOBJIZaR0nGpFKlElDImIkUJpLzkolRAVAlJXCleqSJRCoAnOlKpKKFIB4iN0c3hb-uar177Tq6a3tlhUlIacx4RAmKgxIHamlrvZOvMunA7SUDu9cm9PnnUJ9-ybH5s7A9oE2dD</recordid><startdate>201907</startdate><enddate>201907</enddate><creator>Bohra, Anil K.</creator><creator>Ahmad, Sajid</creator><creator>Bhatt, Ranu</creator><creator>Singh, Ajay</creator><creator>Bhattacharya, Shovit</creator><creator>Basu, Ranita</creator><creator>Sarkar, Pritam</creator><creator>Meshram, Kailash N.</creator><creator>Debnath, Anil K.</creator><creator>Bhatt, Pramod</creator><creator>Sarkar, Shaibal K.</creator><creator>Patro, P. K.</creator><creator>Dasgupta, Kinshuk</creator><creator>Muthe, Kunal P.</creator><creator>Aswal, Dinesh K.</creator><general>WILEY‐VCH Verlag Berlin GmbH</general><general>Wiley Subscription Services, Inc</general><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-1298-4230</orcidid></search><sort><creationdate>201907</creationdate><title>Temperature Driven Unusual Reversible p‐ to n‐Type Conduction Switching in Bi2Te2.7Se0.3</title><author>Bohra, Anil K. ; Ahmad, Sajid ; Bhatt, Ranu ; Singh, Ajay ; Bhattacharya, Shovit ; Basu, Ranita ; Sarkar, Pritam ; Meshram, Kailash N. ; Debnath, Anil K. ; Bhatt, Pramod ; Sarkar, Shaibal K. ; Patro, P. K. ; Dasgupta, Kinshuk ; Muthe, Kunal P. ; Aswal, Dinesh K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p2331-47a9b5ce6dcc1f9583395c21084d49dc01cd076fc4fca7cc0047e5c89d0a80843</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Antisite defects</topic><topic>bismuth telluride</topic><topic>Bismuth tellurides</topic><topic>chalcogenide compounds</topic><topic>conduction switching</topic><topic>reversible semiconductor switches</topic><topic>Seebeck effect</topic><topic>Structural analysis</topic><topic>Switches</topic><topic>Tellurium</topic><topic>Temperature</topic><topic>Temperature dependence</topic><topic>Vacancies</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bohra, Anil K.</creatorcontrib><creatorcontrib>Ahmad, Sajid</creatorcontrib><creatorcontrib>Bhatt, Ranu</creatorcontrib><creatorcontrib>Singh, Ajay</creatorcontrib><creatorcontrib>Bhattacharya, Shovit</creatorcontrib><creatorcontrib>Basu, Ranita</creatorcontrib><creatorcontrib>Sarkar, Pritam</creatorcontrib><creatorcontrib>Meshram, Kailash N.</creatorcontrib><creatorcontrib>Debnath, Anil K.</creatorcontrib><creatorcontrib>Bhatt, Pramod</creatorcontrib><creatorcontrib>Sarkar, Shaibal K.</creatorcontrib><creatorcontrib>Patro, P. K.</creatorcontrib><creatorcontrib>Dasgupta, Kinshuk</creatorcontrib><creatorcontrib>Muthe, Kunal P.</creatorcontrib><creatorcontrib>Aswal, Dinesh K.</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. PSS-RRL. Rapid research letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bohra, Anil K.</au><au>Ahmad, Sajid</au><au>Bhatt, Ranu</au><au>Singh, Ajay</au><au>Bhattacharya, Shovit</au><au>Basu, Ranita</au><au>Sarkar, Pritam</au><au>Meshram, Kailash N.</au><au>Debnath, Anil K.</au><au>Bhatt, Pramod</au><au>Sarkar, Shaibal K.</au><au>Patro, P. K.</au><au>Dasgupta, Kinshuk</au><au>Muthe, Kunal P.</au><au>Aswal, Dinesh K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature Driven Unusual Reversible p‐ to n‐Type Conduction Switching in Bi2Te2.7Se0.3</atitle><jtitle>Physica status solidi. PSS-RRL. Rapid research letters</jtitle><date>2019-07</date><risdate>2019</risdate><volume>13</volume><issue>7</issue><epage>n/a</epage><issn>1862-6254</issn><eissn>1862-6270</eissn><abstract>Bismuth telluride based alloys are electronic semiconductors, which exhibit n‐ or p‐type conduction due to the formation of Te vacancies or antisite defects, i.e., substitution of Bi on Te site or vice versa. Here, it is demonstrated that the temperature dependent Seebeck coefficient of Bi2Te2.7Se0.3 exhibits a reversible change in conduction from p‐ to n‐type at temperatures >487 K without exhibiting any structural transformation. The detailed characterization revealed that conversion of BiTe/Se antisite defects into Te vacancies is responsible for the p–n transition. The observed p–n transition makes Bi2Te2.7Se0.3 an ideal candidate for temperature controlled electronic switches.
Bismuth telluride based alloys usually exhibit n‐ or p‐type conduction due to Te vacancies or due to the formation of Bi vacancies or anitisite defects, i.e., Bi substitution on Te sites or vice versa. The temperature dependent Seebeck coefficient of Bi2Te2.7Se0.3 exhibits a reversible change in conduction from p‐ to n‐type at temperatures >487 K without exhibiting any structural transformation. The conversion of BiTe/Se antisite defects into Te vacancies is responsible for p to n transition of Bi2Te2.7Se0.3.</abstract><cop>Berlin</cop><pub>WILEY‐VCH Verlag Berlin GmbH</pub><doi>10.1002/pssr.201900121</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-1298-4230</orcidid></addata></record> |
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| subjects | Antisite defects bismuth telluride Bismuth tellurides chalcogenide compounds conduction switching reversible semiconductor switches Seebeck effect Structural analysis Switches Tellurium Temperature Temperature dependence Vacancies |
| title | Temperature Driven Unusual Reversible p‐ to n‐Type Conduction Switching in Bi2Te2.7Se0.3 |
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