Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers

The temperature dependencies of the resistivity and Hall coefficient for heavily Al-doped 4H-SiC epilayers with Al concentration (CAl) higher than 2×1019 cm-3 were investigated. The signs of measured Hall coefficients (RH) change from positive to negative at low temperatures. For the epilayers with...

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Veröffentlicht in:	Materials science forum 2019-07, Vol.963, p.324-327
Hauptverfasser:	Nishihata, Rinya, Okumura, Hajime, Yoshida, Sadafumi, Okuda, Kazuya, Ji, Shi Yang, Kato, Tomohisa, Imamura, Tatsuya, Hidaka, Atsuki, Matsuura, Hideharu, Takeshita, Akinobu, Eto, Kazuma, Kojima, Kazutoshi, Takano, Kota
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous semiconductors Coefficients Conduction bands Electrical resistivity Hall effect Hopping conduction Temperature Valence band
Online-Zugang:	Volltext
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