Effect of Melt-Back Process on the Quality of Grown Crystal in SiC Solution Growth

We investigated the effect of a melt-back process on the quality of the grown crystal in 4H-SiC solution growth. In our experiments, the crystal was grown by top-seeded solution growth (TSSG) method with and without melt-back, following which the quality of the obtained crystals was compared. When s...

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Veröffentlicht in:	Materials science forum 2019-07, Vol.963, p.75-79
Hauptverfasser:	Seki, Kazuaki, Kusunoki, Kazuhiko, Kawaguchi, Kotaro
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystal growth Dislocation density Inclusions Solvents
Online-Zugang:	Volltext
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