Effect of Melt-Back Process on the Quality of Grown Crystal in SiC Solution Growth

Effect of Melt-Back Process on the Quality of Grown Crystal in SiC Solution Growth

We investigated the effect of a melt-back process on the quality of the grown crystal in 4H-SiC solution growth. In our experiments, the crystal was grown by top-seeded solution growth (TSSG) method with and without melt-back, following which the quality of the obtained crystals was compared. When s...

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Veröffentlicht in:Materials science forum 2019-07, Vol.963, p.75-79
Hauptverfasser: Seki, Kazuaki, Kusunoki, Kazuhiko, Kawaguchi, Kotaro
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Crystal growth
Dislocation density
Inclusions
Solvents
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description We investigated the effect of a melt-back process on the quality of the grown crystal in 4H-SiC solution growth. In our experiments, the crystal was grown by top-seeded solution growth (TSSG) method with and without melt-back, following which the quality of the obtained crystals was compared. When solution growth was carried out without melt-back, solvent inclusions and a different polytype were observed. When molten KOH etching was conducted, the dislocation density in the crystals at the early stage of growth became much higher than that in a seed crystal. Solvent inclusions, a different polytype, and an increase in dislocations were suppressed when solution growth was performed with melt-back. It was confirmed that melt-back is necessary to prevent the deterioration of crystal quality at the early stage of solution growth.
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subjects Crystal growth
Dislocation density
Inclusions
Solvents
title Effect of Melt-Back Process on the Quality of Grown Crystal in SiC Solution Growth
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