Basal Plane Dislocation Conversion Enhancement in 4H-SiC Homo-Epitaxial Layers by Ion Implantation into the Wafer
We studied the impact of ion implantation into the wafer substrate prior to the epitaxy process on the basal plane dislocation conversion behavior during epitaxial layer growth. Defect density measurements show an enhancing effect of the ion implantation on the basal plane dislocation to threading e...
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| Veröffentlicht in: | Materials science forum 2019-07, Vol.963, p.114-118 |
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| creator | Esteve, Romain Heidorn, Christian Höchbauer, Tobias Krieger, Michael Rupp, Roland Weber, Heiko B. |
| description | We studied the impact of ion implantation into the wafer substrate prior to the epitaxy process on the basal plane dislocation conversion behavior during epitaxial layer growth. Defect density measurements show an enhancing effect of the ion implantation on the basal plane dislocation to threading edge dislocation conversion. Analysis of the lateral conversion distribution, the stress field in the material as well as the wafer topography at the onset of epitaxial growth lead us to believe, that stresses in the epitaxy layer cause the enhanced basal plane dislocation conversion. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.963.114 |
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Defect density measurements show an enhancing effect of the ion implantation on the basal plane dislocation to threading edge dislocation conversion. 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Defect density measurements show an enhancing effect of the ion implantation on the basal plane dislocation to threading edge dislocation conversion. Analysis of the lateral conversion distribution, the stress field in the material as well as the wafer topography at the onset of epitaxial growth lead us to believe, that stresses in the epitaxy layer cause the enhanced basal plane dislocation conversion.</abstract><cop>Pfaffikon</cop><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.963.114</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0003-1480-9161</orcidid></addata></record> |
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| subjects | Basal plane Conversion Crystals Dislocation density Edge dislocations Epitaxial growth Epitaxial layers Ion implantation Magnetism Stress concentration Stress distribution Substrates |
| title | Basal Plane Dislocation Conversion Enhancement in 4H-SiC Homo-Epitaxial Layers by Ion Implantation into the Wafer |
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