Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature

The influence of 15 MeV proton irradiation temperatures (room temperature (RT) - 700 ° C) on the processes of defect formation in commercially available 4H-SiC JBS structures has been studied. It has been shown that the carrier removal rate does not depend on the irradiation temperature. At the same...

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Veröffentlicht in:	Materials science forum 2019-07, Vol.963, p.730-733
Hauptverfasser:	Sleptsuk, Natalja, Lebedev, Alexander A., Davydovskaya, Klavdia S., Korolkov, Oleg, Toompuu, Jana, Kozlovski, Vitalii V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystal defects Crystal lattices Crystal structure Dependence Proton irradiation Radiation damage
Online-Zugang:	Volltext
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